Inventor
KOESTER STEVEN JOHN
US16 patents
⚠️ This page may combine multiple inventors who share the name “KOESTER STEVEN JOHN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
11 patentsUS7985633B2Jul 26, 2011
Embedded DRAM integrated circuits with extremely thin silicon-on-insulator pass transistors
IBM57 citations98
US6350993B1Feb 26, 2002
High speed composite p-channel Si/SiGe heterostructure for field effect devices
IBM404 citations98
US6858502B2Feb 22, 2005
High speed composite p-channel Si/SiGe heterostructure for field effect devices
IBM39 citations95
US6740535B2May 25, 2004
Enhanced T-gate structure for modulation doped field effect transistors
IBM53 citations95
US7282425B2Oct 16, 2007
Structure and method of integrating compound and elemental semiconductors for high-performance CMOS
IBM22 citations92
US6972440B2Dec 6, 2005
Enhanced T-gate structure for modulation doped field effect transistors
IBM19 citations92
US7083998B2Aug 1, 2006
Si/SiGe optoelectronic integrated circuits
IBM20 citations91
US6784466B2Aug 31, 2004
Si/SiGe optoelectronic integrated circuits
IBM34 citations91
US7504311B2Mar 17, 2009
Structure and method of integrating compound and elemental semiconductors for high-performance CMOS
IBM3 citations63
US7084431B2Aug 1, 2006
High speed composite p-channel Si/SiGe heterostructure for field effect devices
IBM3 citations62
US7183175B2Feb 27, 2007
Shallow trench isolation structure for strained Si on SiGe
IBM5 citations61
UNIV MINNESOTA
3 patentsUS10888875B2Jan 12, 2021
Electrodes formed from 2D materials for dielectrophoresis and systems and methods for utilizing the same
UNIV MINNESOTA7 citations84
US11707748B2Jul 25, 2023
Electrodes formed from 2D materials for dielectrophoresis and systems and methods for utilizing the same
UNIV MINNESOTA0 citations62
US12325031B2Jun 10, 2025
Graphene-based dielectrophoresis sensor and method
UNIV MINNESOTA0 citations52