Inventor
SADANA DEVENDRA KUMAR
US19 patents
Patents
19 patentsUS6333532B1Dec 25, 2001
Patterned SOI regions in semiconductor chips
IBM232 citations99
US5767549AJun 16, 1998
SOI CMOS structure
IBM417 citations99
US7524740B1Apr 28, 2009
Localized strain relaxation for strained Si directly on insulator
IBM70 citations98
US6432754B1Aug 13, 2002
Double SOI device with recess etch and epitaxy
IBM141 citations98
US5930643AJul 27, 1999
Defect induced buried oxide (DIBOX) for throughput SOI
IBM107 citations98
US6300218B1Oct 9, 2001
Method for patterning a buried oxide thickness for a separation by implanted oxygen (simox) process
IBM74 citations96
US7282425B2Oct 16, 2007
Structure and method of integrating compound and elemental semiconductors for high-performance CMOS
IBM22 citations92
US6756257B2Jun 29, 2004
Patterned SOI regions on semiconductor chips
IBM34 citations92
US6043166AMar 28, 2000
Silicon-on-insulator substrates using low dose implantation
IBM48 citations92
US6222253B1Apr 24, 2001
Buried oxide layer in silicon
IBM34 citations91
US6090689AJul 18, 2000
Method of forming buried oxide layers in silicon
IBM41 citations91
US7285473B2Oct 23, 2007
Method for fabricating low-defect-density changed orientation Si
IBM11 citations81
US6259137B1Jul 10, 2001
Defect induced buried oxide (DIBOX) for throughput SOI
IBM11 citations74
US6784072B2Aug 31, 2004
Control of buried oxide in SIMOX
IBM9 citations70
US6204546B1Mar 20, 2001
Silicon-on-insulator substrates using low dose implantation
IBM12 citations70
US6087242AJul 11, 2000
Method to improve commercial bonded SOI material
IBM14 citations67
US7504311B2Mar 17, 2009
Structure and method of integrating compound and elemental semiconductors for high-performance CMOS
IBM3 citations63
US7550369B2Jun 23, 2009
Method for fabricating low-defect-density changed orientation Si
IBM0 citations50
US7492008B2Feb 17, 2009
Control of buried oxide in SIMOX
IBM0 citations48