Inventor
CHANG YUN-MIN
TW11 patents
⚠️ This page may combine multiple inventors who share the name “CHANG YUN-MIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
9 patentsUS11355637B2Jun 7, 2022
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations83
US11380794B2Jul 5, 2022
Fin field-effect transistor device having contact plugs with re-entrant profile
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US10553492B2Feb 4, 2020
Selective NFET/PFET recess of source/drain regions
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US12310051B2May 20, 2025
Fin field-effect transistor device having contact plugs with re-entrant profile
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12211937B2Jan 28, 2025
Field effect transistor device with air gap spacer in source/drain contact
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11916147B2Feb 27, 2024
Fin field-effect transistor device having contact plugs with re-entrant profile
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11735667B2Aug 22, 2023
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11715777B2Aug 1, 2023
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11139211B2Oct 5, 2021
Selective NFET/PFET recess of source/drain regions
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62