Inventor
GOGL DIETMAR
US39 patents
⚠️ This page may combine multiple inventors who share the name “GOGL DIETMAR”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
19 patentsUS7411815B2Aug 12, 2008
Memory write circuit
INFINEON TECHNOLOGIES AG64 citations98
US7161861B2Jan 9, 2007
Sense amplifier bitline boost circuit
INFINEON TECHNOLOGIES AG69 citations98
US6498747B1Dec 24, 2002
Magnetoresistive random access memory (MRAM) cross-point array with reduced parasitic effects
INFINEON TECHNOLOGIES AG82 citations96
US6421271B1Jul 16, 2002
MRAM configuration
INFINEON TECHNOLOGIES AG59 citations96
US7251178B2Jul 31, 2007
Current sense amplifier
INFINEON TECHNOLOGIES AG46 citations92
US6847568B2Jan 25, 2005
Sense amplifier configuration for a semiconductor memory device
INFINEON TECHNOLOGIES AG20 citations92
US6577527B2Jun 10, 2003
Method for preventing unwanted programming in an MRAM configuration
INFINEON TECHNOLOGIES AG26 citations92
US6577528B2Jun 10, 2003
Circuit configuration for controlling write and read operations in a magnetoresistive memory configuration
INFINEON TECHNOLOGIES AG21 citations92
US7411854B2Aug 12, 2008
System and method for controlling constant power dissipation
INFINEON TECHNOLOGIES AG10 citations84
US7391639B2Jun 24, 2008
Memory device and method for reading data
INFINEON TECHNOLOGIES AG11 citations84
US6744662B2Jun 1, 2004
Magnetoresistive memory (MRAM)
INFINEON TECHNOLOGIES AG13 citations84
US6545900B2Apr 8, 2003
MRAM module configuration
INFINEON TECHNOLOGIES AG18 citations84
US6781896B2Aug 24, 2004
MRAM semiconductor memory configuration with redundant cell arrays
INFINEON TECHNOLOGIES AG10 citations74
US6501686B2Dec 31, 2002
Electronic driver circuit for word lines in a memory matrix, and memory apparatus
INFINEON TECHNOLOGIES AG6 citations74
US6483768B2Nov 19, 2002
Current driver configuration for MRAM
INFINEON TECHNOLOGIES AG10 citations74
US7200033B2Apr 3, 2007
MRAM with coil for creating offset field
INFINEON TECHNOLOGIES AG3 citations63
US6807089B2Oct 19, 2004
Method for operating an MRAM semiconductor memory configuration
INFINEON TECHNOLOGIES AG2 citations63
US6639829B2Oct 28, 2003
Configuration and method for the low-loss writing of an MRAM
INFINEON TECHNOLOGIES AG6 citations62
US6826075B2Nov 30, 2004
Random access semiconductor memory with reduced signal overcoupling
INFINEON TECHNOLOGIES AG0 citations52
EVERSPIN TECHNOLOGIES INC
11 patentsUS9847116B2Dec 19, 2017
Circuit and method for controlling MRAM cell bias voltages
EVERSPIN TECHNOLOGIES INC5 citations84
US9542989B2Jan 10, 2017
Circuit and method for controlling MRAM cell bias voltages
EVERSPIN TECHNOLOGIES INC5 citations84
US9418001B2Aug 16, 2016
Memory controller and method for interleaving DRAM and MRAM accesses
EVERSPIN TECHNOLOGIES INC5 citations84
US9311980B1Apr 12, 2016
Word line supply voltage generator for a memory device and method therefore
EVERSPIN TECHNOLOGIES INC7 citations84
US9183912B2Nov 10, 2015
Circuit and method for controlling MRAM cell bias voltages
EVERSPIN TECHNOLOGIES INC9 citations84
US9552863B1Jan 24, 2017
Memory device with sampled resistance controlled write voltages
EVERSPIN TECHNOLOGIES INC6 citations71
US9361964B1Jun 7, 2016
Boosted supply voltage generator for a memory device and method therefore
EVERSPIN TECHNOLOGIES INC1 citations63
US9740431B2Aug 22, 2017
Memory controller and method for interleaving DRAM and MRAM accesses
EVERSPIN TECHNOLOGIES INC1 citations52
US9691442B2Jun 27, 2017
Memory device with reduced on-chip noise
EVERSPIN TECHNOLOGIES INC1 citations52
US9583169B2Feb 28, 2017
Boosted supply voltage generator and method therefore
EVERSPIN TECHNOLOGIES INC0 citations52
US9019794B2Apr 28, 2015
Memory device with reduced on-chip noise
EVERSPIN TECHNOLOGIES INC0 citations52
IBM
4 patentsUS6982902B2Jan 3, 2006
MRAM array having a segmented bit line
IBM149 citations99
US6946882B2Sep 20, 2005
Current sense amplifier
IBM61 citations96
US7239537B2Jul 3, 2007
Method and apparatus for current sense amplifier calibration in MRAM devices
IBM29 citations92
US6944049B2Sep 13, 2005
Magnetic tunnel junction memory cell architecture
IBM31 citations92
QIMONDA AG
2 patentsUS7433253B2Oct 7, 2008
Integrated circuit, method of operating an integrated circuit, method of manufacturing an integrated circuit, memory module, stackable memory module
QIMONDA AG131 citations98
US7903454B2Mar 8, 2011
Integrated circuit, memory cell array, memory module, and method of operating an integrated circuit
QIMONDA AG9 citations84