Inventor
KACHIAN JESSICA S
US22 patents
⚠️ This page may combine multiple inventors who share the name “KACHIAN JESSICA S”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INTEL CORP
7 patentsUS9252275B2Feb 2, 2016
Non-planar gate all-around device and method of fabrication thereof
INTEL CORP20 citations92
US10418487B2Sep 17, 2019
Non-planar gate all-around device and method of fabrication thereof
INTEL CORP9 citations84
US10026845B2Jul 17, 2018
Deep gate-all-around semiconductor device having germanium or group III-V active layer
INTEL CORP5 citations84
US9640671B2May 2, 2017
Deep gate-all-around semiconductor device having germanium or group III-V active layer
INTEL CORP2 citations73
US9691848B2Jun 27, 2017
Semiconductor devices with germanium-rich active layers and doped transition layers
INTEL CORP1 citations62
US10008565B2Jun 26, 2018
Semiconductor devices with germanium-rich active layers and doped transition layers
INTEL CORP0 citations51
US9490329B2Nov 8, 2016
Semiconductor devices with germanium-rich active layers and doped transition layers
INTEL CORP0 citations51
APPLIED MATERIALS INC
7 patentsUS9768013B2Sep 19, 2017
Apparatus and method for selective deposition
APPLIED MATERIALS INC10 citations83
US10199215B2Feb 5, 2019
Apparatus and method for selective deposition
APPLIED MATERIALS INC2 citations72
US10553425B2Feb 4, 2020
Self-limiting and saturating chemical vapor deposition of a silicon bilayer and ALD
APPLIED MATERIALS INC0 citations51
US10373824B2Aug 6, 2019
CVD silicon monolayer formation method and gate oxide ALD formation on semiconductor materials
APPLIED MATERIALS INC0 citations51
US9824889B2Nov 21, 2017
CVD silicon monolayer formation method and gate oxide ALD formation on III-V materials
APPLIED MATERIALS INC1 citations51
US9773663B2Sep 26, 2017
Self-limiting and saturating chemical vapor deposition of a silicon bilayer and ALD
APPLIED MATERIALS INC0 citations51
US9896326B2Feb 20, 2018
FCVD line bending resolution by deposition modulation
APPLIED MATERIALS INC0 citations41
RACHMADY WILLY
3 patentsUS8987794B2Mar 24, 2015
Non-planar gate all-around device and method of fabrication thereof
RACHMADY WILLY65 citations98
US8748940B1Jun 10, 2014
Semiconductor devices with germanium-rich active layers and doped transition layers
RACHMADY WILLY35 citations97
US9159787B2Oct 13, 2015
Semiconductor devices with germanium-rich active layers and doped transition layers
RACHMADY WILLY2 citations62