Inventor

BUDREVICH AARON A

US18 patents

⚠️ This page may combine multiple inventors who share the name “BUDREVICH AARON A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

BUDREVICH AARON A

INTEL CORP

Dopant confinement in the delta doped layer using a dopant segregation barrier in quantum well structures

Methods of doping fin structures of non-planar transistor devices

Methods of doping fin structures of non-planar transistor devices

Semiconductor devices with germanium-rich active layers and doped transition layers

Retrograde transistor doping by heterojunction materials

Methods for doping a sub-fin region of a semiconductor fin structure and devices containing the same

Semiconductor device having metallic source and drain regions

Semiconductor devices with germanium-rich active layers and doped transition layers

Semiconductor devices with germanium-rich active layers and doped transition layers

Boundaries with elevated deuterium levels

Dopant confinement in the delta doped layer using a dopant segregration barrier in quantum well structures

Group II element alloys for protecting metal interconnects

RACHMADY WILLY

Semiconductor devices with germanium-rich active layers and doped transition layers

Semiconductor devices with germanium-rich active layers and doped transition layers

LAVOIE ADRIEN R

Reliability of high-K gate dielectric layers

Noble metal barrier layers

GILES MARTIN D

Semiconductor device having metallic source and drain regions

BUDREVICH AARON A

Group II element alloys for protecting metal interconnects