Inventor
JUNG SUNG MUN
SG42 patents
⚠️ This page may combine multiple inventors who share the name “JUNG SUNG MUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
GLOBALFOUNDRIES SG PTE LTD
13 patentsUS9842844B2Dec 12, 2017
Contact strap for memory array
GLOBALFOUNDRIES SG PTE LTD7 citations83
US9269766B2Feb 23, 2016
Guard ring for memory array
GLOBALFOUNDRIES SG PTE LTD9 citations83
US9406687B1Aug 2, 2016
Integration of memory devices with different voltages
GLOBALFOUNDRIES SG PTE LTD17 citations82
US8383475B2Feb 26, 2013
EEPROM cell
GLOBALFOUNDRIES SG PTE LTD3 citations61
US9960172B2May 1, 2018
Reliable non-volatile memory device
GLOBALFOUNDRIES SG PTE LTD1 citations52
US8664708B2Mar 4, 2014
EEPROM cell
GLOBALFOUNDRIES SG PTE LTD1 citations51
US8664711B2Mar 4, 2014
Dielectric stack
GLOBALFOUNDRIES SG PTE LTD0 citations51
US8659067B2Feb 25, 2014
EEPROM cell
GLOBALFOUNDRIES SG PTE LTD0 citations51
US8383476B2Feb 26, 2013
EEPROM cell
GLOBALFOUNDRIES SG PTE LTD1 citations51
US9431408B2Aug 30, 2016
Methods for fabricating integrated circuits with a high-voltage MOSFET
GLOBALFOUNDRIES SG PTE LTD0 citations50
US9054135B2Jun 9, 2015
Methods for fabricating integrated circuits with a high-voltage MOSFET
GLOBALFOUNDRIES SG PTE LTD0 citations50
US10170437B1Jan 1, 2019
Via disguise to protect the security product from delayering and graphic design system (GDS) hacking and method for producing the same
GLOBALFOUNDRIES SG PTE LTD0 citations49
US9911665B2Mar 6, 2018
Integrated circuits, methods of forming the same, and methods of determining gate dielectric layer electrical thickness in integrated circuits
GLOBALFOUNDRIES SG PTE LTD0 citations38
HYNIX SEMICONDUCTOR INC
7 patentsUS7015099B2Mar 21, 2006
Method of manufacturing a flash memory cell capable of increasing a coupling ratio
HYNIX SEMICONDUCTOR INC21 citations92
US6844231B2Jan 18, 2005
Method of manufacturing a flash memory cell using a self-aligned floating gate
HYNIX SEMICONDUCTOR INC25 citations92
US6721208B2Apr 13, 2004
Method of erasing flash memory cells
HYNIX SEMICONDUCTOR INC15 citations84
US6720217B2Apr 13, 2004
Method of manufacturing flash memory device using trench device isolation process
HYNIX SEMICONDUCTOR INC19 citations84
US6759299B2Jul 6, 2004
Method for manufacturing flash memory device
HYNIX SEMICONDUCTOR INC8 citations74
US6620684B2Sep 16, 2003
Method of manufacturing nonvolatile memory cell
HYNIX SEMICONDUCTOR INC8 citations73
US7553724B2Jun 30, 2009
Method for manufacturing code address memory cell by which a stack insulating film of an oxide film and a nitride film used as a dielectric film in a flash memory is used as a gate oxide film
HYNIX SEMICONDUCTOR INC1 citations51
HYUNDAI ELECTRONICS IND
7 patentsUS5804854ASep 8, 1998
Memory cell array
HYUNDAI ELECTRONICS IND13 citations74
US6642110B2Nov 4, 2003
Flash memory cell and method of manufacturing the same
HYUNDAI ELECTRONICS IND11 citations69
US6465833B1Oct 15, 2002
Flash memory cell and method of manufacturing
HYUNDAI ELECTRONICS IND13 citations69
US6426897B1Jul 30, 2002
Method of erasing a flash memory device
HYUNDAI ELECTRONICS IND8 citations69
US6274418B1Aug 14, 2001
Method of manufacturing flash memory cell
HYUNDAI ELECTRONICS IND2 citations61
US6372576B2Apr 16, 2002
Method for manufacturing a floating gate in a flash memory device
HYUNDAI ELECTRONICS IND1 citations52
US6472752B1Oct 29, 2002
Flash memory device
HYUNDAI ELECTRONICS IND1 citations50
DONGBU ELECTRONICS CO LTD
5 patentsUS7122428B2Oct 17, 2006
Device isolation method of semiconductor memory device and flash memory device fabricating method using the same
DONGBU ELECTRONICS CO LTD2 citations63
US7122427B2Oct 17, 2006
Method of fabricating non-volatile memory device
DONGBU ELECTRONICS CO LTD3 citations63
US7195977B2Mar 27, 2007
Method for fabricating a semiconductor device
DONGBU ELECTRONICS CO LTD3 citations61
US7214581B2May 8, 2007
Method of fabricating flash memory device
DONGBU ELECTRONICS CO LTD0 citations52
US7183155B2Feb 27, 2007
Non-volatile memory device and fabricating method thereof
DONGBU ELECTRONICS CO LTD0 citations52
DONGBU HITEK CO LTD
3 patentsUS7297595B2Nov 20, 2007
Non-volatile memory device and fabricating method thereof
DONGBU HITEK CO LTD10 citations84
US7439603B2Oct 21, 2008
Non-volatile memory device and fabricating method thereof
DONGBU HITEK CO LTD5 citations63
US7259074B2Aug 21, 2007
Trench isolation method in flash memory device
DONGBU HITEK CO LTD4 citations63
CHARTERED SEMICONDUCTOR MFG
3 patentsUS7595237B2Sep 29, 2009
Non-volatile memory cell with a hybrid access transistor
CHARTERED SEMICONDUCTOR MFG4 citations59
US7585746B2Sep 8, 2009
Process integration scheme of SONOS technology
CHARTERED SEMICONDUCTOR MFG4 citations56
US7332378B2Feb 19, 2008
Integrated circuit memory system with dummy active region
CHARTERED SEMICONDUCTOR MFG0 citations47