Inventor
JANG SEMYEONG
KR24 patents
⚠️ This page may combine multiple inventors who share the name “JANG SEMYEONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
CHANGXIN MEMORY TECH INC
15 patentsUS12342524B2Jun 24, 2025
Method for fabricating semiconductor device and semiconductor device
CHANGXIN MEMORY TECH INC2 citations73
US12419037B2Sep 16, 2025
Semiconductor structure and method for manufacturing semiconductor structure
CHANGXIN MEMORY TECH INC0 citations61
US12396160B2Aug 19, 2025
Method for fabricating semiconductor structure and semiconductor structure
CHANGXIN MEMORY TECH INC0 citations61
US12349334B2Jul 1, 2025
Semiconductor structure and method for manufacturing same
CHANGXIN MEMORY TECH INC0 citations51
US12575162B2Mar 10, 2026
Semiconductor structure and method for manufacturing semiconductor structure
CHANGXIN MEMORY TECH INC0 citations50
US12507396B2Dec 23, 2025
Semiconductor structure and method for manufacturing same
CHANGXIN MEMORY TECH INC0 citations50
US12414285B2Sep 9, 2025
Semiconductor structure and manufacturing method thereof
CHANGXIN MEMORY TECH INC0 citations50
US12408378B2Sep 2, 2025
Semiconductor structure and method for manufacturing same
CHANGXIN MEMORY TECH INC0 citations50
US12389651B2Aug 12, 2025
Semiconductor structure and fabrication method thereof
CHANGXIN MEMORY TECH INC0 citations50
US12336164B2Jun 17, 2025
Semiconductor structure and method for manufacturing semiconductor structure
CHANGXIN MEMORY TECH INC0 citations50
US12520473B2Jan 6, 2026
Semiconductor structure and method for manufacturing semiconductor structure
CHANGXIN MEMORY TECH INC0 citations49
US12426232B2Sep 23, 2025
Semiconductor structure with semiconductor pillars and method for manufacturing same
CHANGXIN MEMORY TECH INC0 citations49
US12419034B2Sep 16, 2025
Vertical gate all around transistor having dual gate structures
CHANGXIN MEMORY TECH INC0 citations49
US12408322B2Sep 2, 2025
Semiconductor structure and method for manufacturing the same
CHANGXIN MEMORY TECH INC0 citations49
US12369295B2Jul 22, 2025
Semiconductor structure and manufacturing method thereof
CHANGXIN MEMORY TECH INC0 citations49
SAMSUNG ELECTRONICS CO LTD
9 patentsUS7394116B2Jul 1, 2008
Semiconductor device including a multi-channel fin field effect transistor including protruding active portions and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD96 citations95
US10373960B2Aug 6, 2019
Semiconductor memory devices including separate upper and lower bit line spacers
SAMSUNG ELECTRONICS CO LTD8 citations84
US9847278B2Dec 19, 2017
Semiconductor devices having air spacers and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD12 citations83
US11088148B2Aug 10, 2021
Semiconductor memory devices including separate upper and lower bit line spacers
SAMSUNG ELECTRONICS CO LTD1 citations73
US10559571B2Feb 11, 2020
Methods of fabricating semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD4 citations73
US10121793B2Nov 6, 2018
Semiconductor device having supporters and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD6 citations72
US10943812B2Mar 9, 2021
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD4 citations67
US11744063B2Aug 29, 2023
Semiconductor memory devices including separate upper and lower bit line spacers and methods of forming the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US9287300B2Mar 15, 2016
Methods for fabricating semiconductor devices
SAMSUNG ELECTRONICS CO LTD1 citations52