Inventor
FELIX NELSON M
US29 patents
⚠️ This page may combine multiple inventors who share the name “FELIX NELSON M”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
22 patentsUS9934970B1Apr 3, 2018
Self aligned pattern formation post spacer etchback in tight pitch configurations
IBM22 citations94
US10529569B2Jan 7, 2020
Self aligned pattern formation post spacer etchback in tight pitch configurations
IBM5 citations84
US10410875B2Sep 10, 2019
Alternating hardmasks for tight-pitch line formation
IBM4 citations84
US9779944B1Oct 3, 2017
Method and structure for cut material selection
IBM17 citations84
US10103022B2Oct 16, 2018
Alternating hardmasks for tight-pitch line formation
IBM8 citations83
US10312103B2Jun 4, 2019
Alternating hardmasks for tight-pitch line formation
IBM1 citations73
US10121661B2Nov 6, 2018
Self aligned pattern formation post spacer etchback in tight pitch configurations
IBM2 citations73
US10056290B2Aug 21, 2018
Self-aligned pattern formation for a semiconductor device
IBM2 citations73
US9786554B1Oct 10, 2017
Self aligned conductive lines
IBM5 citations73
US8361683B2Jan 29, 2013
Multi-layer chip overlay target and measurement
IBM5 citations73
US10580652B2Mar 3, 2020
Alternating hardmasks for tight-pitch line formation
IBM2 citations72
US9941142B1Apr 10, 2018
Tunable TiOxNy hardmask for multilayer patterning
IBM3 citations72
US9799534B1Oct 24, 2017
Application of titanium-oxide as a patterning hardmask
IBM2 citations71
US9059102B2Jun 16, 2015
Metrology marks for unidirectional grating superposition patterning processes
IBM2 citations63
US11646221B2May 9, 2023
Self-aligned pattern formation for a semiconductor device
IBM0 citations62
US11227793B2Jan 18, 2022
Self-aligned pattern formation for a semiconductor device
IBM0 citations62
US10249512B2Apr 2, 2019
Tunable TiOxNy hardmask for multilayer patterning
IBM1 citations62
US9257351B2Feb 9, 2016
Metrology marks for bidirectional grating superposition patterning processes
IBM2 citations57
US10727055B2Jul 28, 2020
Method to increase the lithographic process window of extreme ultra violet negative tone development resists
IBM0 citations52
US10388521B2Aug 20, 2019
Method to increase the lithographic process window of extreme ultra violet negative tone development resists
IBM0 citations52
US9911647B2Mar 6, 2018
Self aligned conductive lines
IBM1 citations52
US8847416B2Sep 30, 2014
Multi-layer chip overlay target and measurement
IBM0 citations52
TESSERA LLC
3 patentsUS11670510B2Jun 6, 2023
Self aligned pattern formation post spacer etchback in tight pitch configurations
TESSERA LLC1 citations73
US11610780B2Mar 21, 2023
Alternating hardmasks for tight-pitch line formation
TESSERA LLC2 citations73
US12106963B2Oct 1, 2024
Self aligned pattern formation post spacer etchback in tight pitch configurations
TESSERA LLC0 citations62
TESSERA INC
3 patentsUS11031248B2Jun 8, 2021
Alternating hardmasks for tight-pitch line formation
TESSERA INC2 citations73
US11171002B2Nov 9, 2021
Alternating hardmasks for tight-pitch line formation
TESSERA INC0 citations62
US11018007B2May 25, 2021
Self aligned pattern formation post spacer etchback in tight pitch configurations
TESSERA INC0 citations62