Inventor
NAYLOR CARL
US27 patents
Patents
27 patentsUS11444024B2Sep 13, 2022
Subtractively patterned interconnect structures for integrated circuits
INTEL CORP10 citations84
US11830788B2Nov 28, 2023
Integrated circuits and methods for forming integrated circuits
INTEL CORP2 citations72
US11171239B2Nov 9, 2021
Transistor channel passivation with 2D crystalline material
INTEL CORP2 citations72
US12027458B2Jul 2, 2024
Subtractively patterned interconnect structures for integrated circuits
INTEL CORP2 citations71
US12396217B2Aug 19, 2025
Encapsulation for transition metal dichalcogenide nanosheet transistor and methods of fabrication
INTEL CORP1 citations63
US12349442B2Jul 1, 2025
Thin film transistors having semiconductor structures integrated with 2D channel materials
INTEL CORP0 citations62
US12278289B2Apr 15, 2025
TMD inverted nanowire integration
INTEL CORP0 citations62
US12211794B2Jan 28, 2025
Integrated circuits and methods for forming thin film crystal layers
INTEL CORP0 citations62
US12176388B2Dec 24, 2024
Transition metal dichalcogenide nanowires and methods of fabrication
INTEL CORP0 citations62
US12165917B2Dec 10, 2024
Integrated circuit interconnect structures with ultra-thin metal chalcogenide barrier materials
INTEL CORP0 citations62
US12107170B2Oct 1, 2024
Transistor channel passivation with 2D crystalline material
INTEL CORP0 citations62
US12057388B2Aug 6, 2024
Integrated circuit structures having linerless self-forming barriers
INTEL CORP0 citations62
US11935956B2Mar 19, 2024
TMD inverted nanowire integration
INTEL CORP0 citations62
US11908950B2Feb 20, 2024
Charge-transfer spacers for stacked nanoribbon 2D transistors
INTEL CORP0 citations62
US11888034B2Jan 30, 2024
Transistors with metal chalcogenide channel materials
INTEL CORP1 citations62
US11482622B2Oct 25, 2022
Adhesion structure for thin film transistor
INTEL CORP0 citations62
US11276644B2Mar 15, 2022
Integrated circuits and methods for forming thin film crystal layers
INTEL CORP1 citations62
US11164809B2Nov 2, 2021
Integrated circuits and methods for forming integrated circuits
INTEL CORP0 citations62
US12482744B2Nov 25, 2025
Subtractively patterned interconnect structures for integrated circuits
INTEL CORP0 citations61
US12432976B2Sep 30, 2025
Thin film transistors having strain-inducing structures integrated with 2D channel materials
INTEL CORP0 citations61
US12266720B2Apr 1, 2025
Transistors with monocrystalline metal chalcogenide channel materials
INTEL CORP0 citations61
US12394716B2Aug 19, 2025
Integrated circuit interconnect structures with graphene cap
INTEL CORP1 citations59
US11670588B2Jun 6, 2023
Selectable vias for back end of line interconnects
INTEL CORP0 citations52
US12349438B2Jul 1, 2025
Contact gating for 2D field effect transistors
INTEL CORP0 citations51
US12266712B2Apr 1, 2025
Transition metal dichalcogenide nanosheet transistors and methods of fabrication
INTEL CORP0 citations51
US12125895B2Oct 22, 2024
Transition metal dichalcogenide (TMD) layer stack for transistor applications and methods of fabrication
INTEL CORP0 citations51
US11532558B2Dec 20, 2022
Metallization barrier structures for bonded integrated circuit interfaces
INTEL CORP0 citations49