Inventor

HOMMA TETSUYA

JP20 patents

⚠️ This page may combine multiple inventors who share the name “HOMMA TETSUYA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HOMMA TETSUYA

NEC CORP

Process for producing semiconductor devices

Method for fabricating a semiconductor device having a multi-layered interconnection structure

Method of forming silicon oxide film containing fluorine

Forming multi-layered interconnections with fluorine compound treatment permitting selective deposition of insulator

Fabrication process for multilevel interconnections in a semiconductor device

Method of manufacturing semiconductor device

Method of fabricating multilevel interconnections in a semiconductor integrated circuit

Semiconductor device having a silicon oxide film containing fluorine atoms

Method of producing semiconductor integrated circuit device having interplayer insulating film covering substrate

Method of manufacturing semiconductor device using the abrasive

Method of fabricating a semiconductor device having a multilayer wiring structure and using a fluorine compound-containing gas

Method for manufacturing semiconductor device

Method for forming interconnect structure, insulating films and surface protective films of semiconductor device

Method for forming multilevel interconnections in a semiconductor device

Method for fabricating a semiconductor device having multilevel interconnections

Semiconductor device having an organic resin layer and silicon oxide layer containing fluorine for preventing crosstalk between metal lines and a method of manufacturing the same

Fabrication method of semiconductor device

Spin on glass material and method for forming a semiconductor device by using improved spin on glass material

NEC CORPROATION

Chemical vapor deposition method for forming fluorine containing silicon oxide film

HOMMA TETSUYA

Method of recycling useful metal