Inventor
DE FRESART EDOUARD D
US25 patents
⚠️ This page may combine multiple inventors who share the name “DE FRESART EDOUARD D”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FREESCALE SEMICONDUCTOR INC
11 patentsUS6787858B2Sep 7, 2004
Carrier injection protection structure
FREESCALE SEMICONDUCTOR INC25 citations92
US7919388B2Apr 5, 2011
Methods for fabricating semiconductor devices having reduced gate-drain capacitance
FREESCALE SEMICONDUCTOR INC7 citations84
US7510938B2Mar 31, 2009
Semiconductor superjunction structure
FREESCALE SEMICONDUCTOR INC12 citations84
US7378317B2May 27, 2008
Superjunction power MOSFET
FREESCALE SEMICONDUCTOR INC10 citations84
US7074681B2Jul 11, 2006
Semiconductor component and method of manufacturing
FREESCALE SEMICONDUCTOR INC12 citations78
US7211477B2May 1, 2007
High voltage field effect device and method
FREESCALE SEMICONDUCTOR INC6 citations73
US9680003B2Jun 13, 2017
Trench MOSFET shield poly contact
FREESCALE SEMICONDUCTOR INC5 citations72
US7651918B2Jan 26, 2010
Strained semiconductor power device and method
FREESCALE SEMICONDUCTOR INC4 citations63
US7592230B2Sep 22, 2009
Trench power device and method
FREESCALE SEMICONDUCTOR INC6 citations63
US7598517B2Oct 6, 2009
Superjunction trench device and method
FREESCALE SEMICONDUCTOR INC1 citations52
US8030153B2Oct 4, 2011
High voltage TMOS semiconductor device with low gate charge structure and method of making
FREESCALE SEMICONDUCTOR INC1 citations51
WANG PEILIN
5 patentsUS9293535B2Mar 22, 2016
Power MOSFET current sense structure and method
WANG PEILIN5 citations70
US8759909B2Jun 24, 2014
Power MOSFET structure and method
WANG PEILIN2 citations59
US9368576B2Jun 14, 2016
Methods of manufacturing trench semiconductor devices with edge termination structures
WANG PEILIN0 citations49
US9105495B2Aug 11, 2015
Semiconductor device and related fabrication methods
WANG PEILIN0 citations49
US8932928B2Jan 13, 2015
Power MOSFET structure and method
WANG PEILIN1 citations49
MOTOROLA INC
4 patentsUS5273930ADec 28, 1993
Method of forming a non-selective silicon-germanium epitaxial film
MOTOROLA INC128 citations98
US5436180AJul 25, 1995
Method for reducing base resistance in epitaxial-based bipolar transistor
MOTOROLA INC22 citations92
US5286661AFeb 15, 1994
Method of forming a bipolar transistor having an emitter overhang
MOTOROLA INC47 citations92
US5272096ADec 21, 1993
Method for making a bipolar transistor having a silicon carbide layer
MOTOROLA INC35 citations92