Inventor

QIN GANMING

US29 patents

⚠️ This page may combine multiple inventors who share the name “QIN GANMING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

QIN GANMING

NXP USA INC

Termination design for trench superjunction power MOSFET

Method of manufacture of super-junction power semiconductor device

Termination design for trench superjunction power MOSFET

Superjunction power semiconductor device and method for forming

Transistor with integrated short circuit protection

Termination for trench field plate power MOSFET

Mirror device structure for power MOSFET and method of manufacture

Termination for trench field plate power MOSFET

Mirror device structure for power MOSFET and method of manufacture

Vertical bi-directional switches and method for making same

Trench MOSFET shield poly contact

Termination ballast to suppress hotspot formation in trench field plate power MOSFETs

Bidirectional power MOSFET structure with a cathode short structure

Bidirectional power MOSFET structure with a cathode short structure

FREESCALE SEMICONDUCTOR INC

Superjunction power MOSFET

Edge termination for trench gate FET

Trench gate FET with self-aligned source contact

Bidirectional MOSFET with suppressed bipolar snapback and method of manufacture

Shielded trench semiconductor devices and related fabrication methods

Trench MOSFET shield poly contact

Superjunction power MOSFET

High voltage TMOS semiconductor device with low gate charge structure and method of making

ZITOUNI MOANISS

Power device termination structures and methods

Bidirectional trench FET with gate-based resurf

Bidirectional trench FET with gate-based resurf

WANG PEILIN

Power MOSFET current sense structure and method

CHEN JINGJING

Method for forming a vertical MOS transistor

MOTOROLA INC

Field emission device having an improved ballast resistor

QIN GANMING

Trench FET with source recess etch