Inventor
HASHIMOTO PAUL
US11 patents
Patents
11 patentsUS7598131B1Oct 6, 2009
High power-low noise microwave GaN heterojunction field effect transistor
HRL LAB LLC20 citations91
US7470941B2Dec 30, 2008
High power-low noise microwave GaN heterojunction field effect transistor
HRL LAB LLC27 citations91
US7098490B2Aug 29, 2006
GaN DHFET
HRL LAB LLC20 citations91
US6897137B2May 24, 2005
Process for fabricating ultra-low contact resistances in GaN-based devices
HRL LAB LLC16 citations90
US6852615B2Feb 8, 2005
Ohmic contacts for high electron mobility transistors and a method of making the same
HRL LAB LLC27 citations89
US6884704B2Apr 26, 2005
Ohmic metal contact and channel protection in GaN devices using an encapsulation layer
HRL LAB LLC10 citations72
US6830945B2Dec 14, 2004
Method for fabricating a non-planar nitride-based heterostructure field effect transistor
HRL LAB LLC5 citations72
US7700974B2Apr 20, 2010
Process for fabricating ultra-low contact resistances in GaN-based devices
HRL LAB LLC6 citations67
US7566916B2Jul 28, 2009
Ohmic metal contact and channel protection in GaN devices using an encapsulation layer
HRL LAB LLC1 citations61
US8030688B2Oct 4, 2011
Ohmic metal contact protection using an encapsulation layer
HRL LAB LLC0 citations50
US7247893B2Jul 24, 2007
Non-planar nitride-based heterostructure field effect transistor
HRL LAB LLC1 citations50