Inventor
TANIZAKI TETSUSHI
JP27 patents
⚠️ This page may combine multiple inventors who share the name “TANIZAKI TETSUSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MITSUBISHI ELECTRIC CORP
18 patentsUS6064621AMay 16, 2000
Multi-bank clock synchronous type semiconductor memory device having improved memory array and power supply arrangement
MITSUBISHI ELECTRIC CORP103 citations98
US5914907AJun 22, 1999
Semiconductor memory device capable of increasing chip yields while maintaining rapid operation
MITSUBISHI ELECTRIC CORP69 citations96
US6295238B1Sep 25, 2001
Semiconductor memory device having a circuit for fast operation
MITSUBISHI ELECTRIC CORP29 citations93
US5909046AJun 1, 1999
Semiconductor integrated circuit device having stable input protection circuit
MITSUBISHI ELECTRIC CORP19 citations93
US5896328AApr 20, 1999
Semiconductor memory device allowing writing of desired data to a storage node of a defective memory cell
MITSUBISHI ELECTRIC CORP34 citations93
US6496429B2Dec 17, 2002
Semiconductor memory device
MITSUBISHI ELECTRIC CORP39 citations92
US6215720B1Apr 10, 2001
High speed operable semiconductor memory device with memory blocks arranged about the center
MITSUBISHI ELECTRIC CORP18 citations92
US6072743AJun 6, 2000
High speed operable semiconductor memory device with memory blocks arranged about the center
MITSUBISHI ELECTRIC CORP35 citations92
US6038186AMar 14, 2000
Semiconductor memory device that can have power consumption reduced during self refresh mode
MITSUBISHI ELECTRIC CORP41 citations92
US5386387AJan 31, 1995
Semiconductor memory device including additional memory cell block having irregular memory cell arrangement
MITSUBISHI ELECTRIC CORP20 citations92
US5349562ASep 20, 1994
Dynamic random access memory device suitable for shortening time required for testing self-refresh function
MITSUBISHI ELECTRIC CORP48 citations92
US6327198B1Dec 4, 2001
Semiconductor memory device having a test mode setting circuit
MITSUBISHI ELECTRIC CORP17 citations84
US6272034B1Aug 7, 2001
Semiconductor memory device
MITSUBISHI ELECTRIC CORP16 citations84
US6614713B2Sep 2, 2003
Semiconductor memory device having a circuit for fast operation
MITSUBISHI ELECTRIC CORP11 citations74
US6337506B2Jan 8, 2002
Semiconductor memory device capable of performing stable operation for noise while preventing increase in chip area
MITSUBISHI ELECTRIC CORP11 citations74
US5297102AMar 22, 1994
Semiconductor memory device storing data and parity bit
MITSUBISHI ELECTRIC CORP18 citations74
US6335645B1Jan 1, 2002
Semiconductor integrated circuit having built-in self-test circuit
MITSUBISHI ELECTRIC CORP10 citations71
US6288956B1Sep 11, 2001
Semiconductor device having test function
MITSUBISHI ELECTRIC CORP2 citations63
RENESAS TECH CORP
8 patentsUS6782498B2Aug 24, 2004
Semiconductor memory device allowing mounting of built-in self test circuit without addition of interface specification
RENESAS TECH CORP22 citations93
US7007215B2Feb 28, 2006
Test circuit capable of testing embedded memory with reliability
RENESAS TECH CORP46 citations92
US6962827B1Nov 8, 2005
Semiconductor device capable of shortening test time and suppressing increase in chip area, and method of manufacturing semiconductor integrated circuit device
RENESAS TECH CORP29 citations92
US7032141B2Apr 18, 2006
Semiconductor device including test-facilitating circuit using built-in self test circuit
RENESAS TECH CORP8 citations74
US6762967B2Jul 13, 2004
Semiconductor memory device having a circuit for fast operation
RENESAS TECH CORP12 citations74
US6779139B2Aug 17, 2004
Circuit for reducing test time and semiconductor memory device including the circuit
RENESAS TECH CORP4 citations63
US6704229B2Mar 9, 2004
Semiconductor test circuit for testing a semiconductor memory device having a write mask function
RENESAS TECH CORP5 citations63
US7505352B2Mar 17, 2009
Parallel operational processing device
RENESAS TECH CORP4 citations61