P

Inventor

TANIZAKI TETSUSHI

JP27 patents
⚠️ This page may combine multiple inventors who share the name “TANIZAKI TETSUSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MITSUBISHI ELECTRIC CORP

18 patents
US6064621AMay 16, 2000

Multi-bank clock synchronous type semiconductor memory device having improved memory array and power supply arrangement

MITSUBISHI ELECTRIC CORP103 citations98
US5914907AJun 22, 1999

Semiconductor memory device capable of increasing chip yields while maintaining rapid operation

MITSUBISHI ELECTRIC CORP69 citations96
US6295238B1Sep 25, 2001

Semiconductor memory device having a circuit for fast operation

MITSUBISHI ELECTRIC CORP29 citations93
US5909046AJun 1, 1999

Semiconductor integrated circuit device having stable input protection circuit

MITSUBISHI ELECTRIC CORP19 citations93
US5896328AApr 20, 1999

Semiconductor memory device allowing writing of desired data to a storage node of a defective memory cell

MITSUBISHI ELECTRIC CORP34 citations93
US6496429B2Dec 17, 2002

Semiconductor memory device

MITSUBISHI ELECTRIC CORP39 citations92
US6215720B1Apr 10, 2001

High speed operable semiconductor memory device with memory blocks arranged about the center

MITSUBISHI ELECTRIC CORP18 citations92
US6072743AJun 6, 2000

High speed operable semiconductor memory device with memory blocks arranged about the center

MITSUBISHI ELECTRIC CORP35 citations92
US6038186AMar 14, 2000

Semiconductor memory device that can have power consumption reduced during self refresh mode

MITSUBISHI ELECTRIC CORP41 citations92
US5386387AJan 31, 1995

Semiconductor memory device including additional memory cell block having irregular memory cell arrangement

MITSUBISHI ELECTRIC CORP20 citations92
US5349562ASep 20, 1994

Dynamic random access memory device suitable for shortening time required for testing self-refresh function

MITSUBISHI ELECTRIC CORP48 citations92
US6327198B1Dec 4, 2001

Semiconductor memory device having a test mode setting circuit

MITSUBISHI ELECTRIC CORP17 citations84
US6272034B1Aug 7, 2001

Semiconductor memory device

MITSUBISHI ELECTRIC CORP16 citations84
US6614713B2Sep 2, 2003

Semiconductor memory device having a circuit for fast operation

MITSUBISHI ELECTRIC CORP11 citations74
US6337506B2Jan 8, 2002

Semiconductor memory device capable of performing stable operation for noise while preventing increase in chip area

MITSUBISHI ELECTRIC CORP11 citations74
US5297102AMar 22, 1994

Semiconductor memory device storing data and parity bit

MITSUBISHI ELECTRIC CORP18 citations74
US6335645B1Jan 1, 2002

Semiconductor integrated circuit having built-in self-test circuit

MITSUBISHI ELECTRIC CORP10 citations71
US6288956B1Sep 11, 2001

Semiconductor device having test function

MITSUBISHI ELECTRIC CORP2 citations63

RENESAS TECH CORP

8 patents

RYODEN SEMICONDUCTOR SYST ENG

1 patent