Inventor

JUNG HAN-GYUN

KR2 patents

Patents

2 patents

US7495973B2Feb 24, 2009

Circuit and method for controlling write recovery time in semiconductor memory device

SAMSUNG ELECTRONICS CO LTD11 citations78

US7298199B2Nov 20, 2007

Substrate bias voltage generating circuit for use in a semiconductor memory device

SAMSUNG ELECTRONICS CO LTD4 citations58