P

Inventor

WOEHLERT STEFAN

AT22 patents
⚠️ This page may combine multiple inventors who share the name “WOEHLERT STEFAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

INFINEON TECHNOLOGIES AG

15 patents
US9589880B2Mar 7, 2017

Method for processing a wafer and wafer structure

INFINEON TECHNOLOGIES AG3 citations69
US7911061B2Mar 22, 2011

Semiconductor device

INFINEON TECHNOLOGIES AG4 citations61
US12327727B2Jun 10, 2025

Chip with a silicon carbide substrate

INFINEON TECHNOLOGIES AG0 citations59
US11842938B2Dec 12, 2023

Semiconductor device and method for forming a semiconductor device

INFINEON TECHNOLOGIES AG0 citations59
US11798807B2Oct 24, 2023

Process for producing an electrical contact on a silicon carbide substrate

INFINEON TECHNOLOGIES AG0 citations59
US11615963B2Mar 28, 2023

Electronic device, electronic module and methods for fabricating the same

INFINEON TECHNOLOGIES AG0 citations59
US11217500B2Jan 4, 2022

Semiconductor device and method for forming a semiconductor device

INFINEON TECHNOLOGIES AG0 citations59
US11043383B2Jun 22, 2021

Electrical contact connection on silicon carbide substrate

INFINEON TECHNOLOGIES AG0 citations59
US10741402B2Aug 11, 2020

Electronic device, electronic module and methods for fabricating the same

INFINEON TECHNOLOGIES AG1 citations59
US11410950B2Aug 9, 2022

Semiconductor substrate having a bond pad material based on aluminum

INFINEON TECHNOLOGIES AG0 citations53
US9634108B2Apr 25, 2017

Method of manufacturing a device by locally heating one or more metalization layers and by means of selective etching

INFINEON TECHNOLOGIES AG0 citations51
US9391154B2Jul 12, 2016

Method of manufacturing a device by locally heating one or more metalization layers and by means of selective etching

INFINEON TECHNOLOGIES AG0 citations51
US9812376B2Nov 7, 2017

Electrically conductive element, power semiconductor device having an electrically conductive element and method of manufacturing a power semiconductor device

INFINEON TECHNOLOGIES AG0 citations49
US10446469B2Oct 15, 2019

Semiconductor device having a copper element and method of forming a semiconductor device having a copper element

INFINEON TECHNOLOGIES AG0 citations48
US9935060B2Apr 3, 2018

Method for processing a wafer and wafer structure

INFINEON TECHNOLOGIES AG0 citations48

MATOY KURT

1 patent

OTREMBA RALF

1 patent

RUPP ROLAND

1 patent

SCHNEEGANS MANFRED

1 patent

INFINEON TECHNOLOGIES AUSTRIA

1 patent

KADOW CHRISTOPH

1 patent

DETZEL THOMAS

1 patent