Inventor
WOEHLERT STEFAN
AT22 patents
⚠️ This page may combine multiple inventors who share the name “WOEHLERT STEFAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
15 patentsUS9589880B2Mar 7, 2017
Method for processing a wafer and wafer structure
INFINEON TECHNOLOGIES AG3 citations69
US7911061B2Mar 22, 2011
Semiconductor device
INFINEON TECHNOLOGIES AG4 citations61
US12327727B2Jun 10, 2025
Chip with a silicon carbide substrate
INFINEON TECHNOLOGIES AG0 citations59
US11842938B2Dec 12, 2023
Semiconductor device and method for forming a semiconductor device
INFINEON TECHNOLOGIES AG0 citations59
US11798807B2Oct 24, 2023
Process for producing an electrical contact on a silicon carbide substrate
INFINEON TECHNOLOGIES AG0 citations59
US11615963B2Mar 28, 2023
Electronic device, electronic module and methods for fabricating the same
INFINEON TECHNOLOGIES AG0 citations59
US11217500B2Jan 4, 2022
Semiconductor device and method for forming a semiconductor device
INFINEON TECHNOLOGIES AG0 citations59
US11043383B2Jun 22, 2021
Electrical contact connection on silicon carbide substrate
INFINEON TECHNOLOGIES AG0 citations59
US10741402B2Aug 11, 2020
Electronic device, electronic module and methods for fabricating the same
INFINEON TECHNOLOGIES AG1 citations59
US11410950B2Aug 9, 2022
Semiconductor substrate having a bond pad material based on aluminum
INFINEON TECHNOLOGIES AG0 citations53
US9634108B2Apr 25, 2017
Method of manufacturing a device by locally heating one or more metalization layers and by means of selective etching
INFINEON TECHNOLOGIES AG0 citations51
US9391154B2Jul 12, 2016
Method of manufacturing a device by locally heating one or more metalization layers and by means of selective etching
INFINEON TECHNOLOGIES AG0 citations51
US9812376B2Nov 7, 2017
Electrically conductive element, power semiconductor device having an electrically conductive element and method of manufacturing a power semiconductor device
INFINEON TECHNOLOGIES AG0 citations49
US10446469B2Oct 15, 2019
Semiconductor device having a copper element and method of forming a semiconductor device having a copper element
INFINEON TECHNOLOGIES AG0 citations48
US9935060B2Apr 3, 2018
Method for processing a wafer and wafer structure
INFINEON TECHNOLOGIES AG0 citations48