Inventor
RALEY ANGELIQUE D
US15 patents
⚠️ This page may combine multiple inventors who share the name “RALEY ANGELIQUE D”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOKYO ELECTRON LTD
14 patentsUS9786503B2Oct 10, 2017
Method for increasing pattern density in self-aligned patterning schemes without using hard masks
TOKYO ELECTRON LTD45 citations93
US9443731B1Sep 13, 2016
Material processing to achieve sub-10nm patterning
TOKYO ELECTRON LTD21 citations91
US9171736B2Oct 27, 2015
Spacer material modification to improve K-value and etch properties
TOKYO ELECTRON LTD16 citations83
US9165765B1Oct 20, 2015
Method for patterning differing critical dimensions at sub-resolution scales
TOKYO ELECTRON LTD17 citations83
US9748110B2Aug 29, 2017
Method and system for selective spacer etch for multi-patterning schemes
TOKYO ELECTRON LTD4 citations72
US10971372B2Apr 6, 2021
Gas phase etch with controllable etch selectivity of Si-containing arc or silicon oxynitride to different films or masks
TOKYO ELECTRON LTD2 citations71
US9257280B2Feb 9, 2016
Mitigation of asymmetrical profile in self aligned patterning etch
TOKYO ELECTRON LTD5 citations71
US11333968B2May 17, 2022
Method for reducing lithography defects and pattern transfer
TOKYO ELECTRON LTD0 citations62
US11538691B2Dec 27, 2022
Gas phase etch with controllable etch selectivity of Si-containing arc or silicon oxynitride to different films or masks
TOKYO ELECTRON LTD0 citations61
US11380554B2Jul 5, 2022
Gas phase etching system and method
TOKYO ELECTRON LTD0 citations61
US10580660B2Mar 3, 2020
Gas phase etching system and method
TOKYO ELECTRON LTD0 citations51
US11361993B2Jun 14, 2022
Method for inverse via patterning for back end of line dual damascene structures
TOKYO ELECTRON LTD0 citations50
US10854453B2Dec 1, 2020
Method for reducing reactive ion etch lag in low K dielectric etching
TOKYO ELECTRON LTD0 citations40
US10497575B2Dec 3, 2019
Method for increasing trench CD in EUV patterning without increasing single line opens or roughness
TOKYO ELECTRON LTD0 citations39