Inventor

HASHIMOTO TADAO

US71 patents

⚠️ This page may combine multiple inventors who share the name “HASHIMOTO TADAO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HASHIMOTO TADAO

SIXPOINT MAT INC

Group III nitride bulk crystals and their fabrication method

Growth reactor for gallium-nitride crystals using ammonia and hydrogen chloride

Group III nitride wafer and its production method

Method of growing group III nitride crystals

Group III nitride wafers and fabrication method and testing method

Method of fabricating group III nitride with gradually degraded crystal structure

Group III nitride crystals, their fabrication method, and method of fabricating bulk group III nitride crystals in supercritical ammonia

Seed crystal for growth of gallium nitride bulk crystal in supercritical ammonia and fabrication method

Seed crystal for growth of gallium nitride bulk crystal in supercritical ammonia and fabrication method

Seed selection and growth methods for reduced-crack group III nitride bulk crystals

Low-dislocation bulk GaN crystal and method of fabricating same

Electronic device using group III nitride semiconductor and its fabrication method

Electronic device using group III nitride semiconductor and its fabrication method

Electronic device using group III nitride semiconductor and its fabrication method

Electronic device using group III nitride semiconductor and its fabrication method and an epitaxial multi-layer wafer for making it

Electronic device and epitaxial multilayer wafer of group III nitride semiconductor having specified dislocation density, oxygen/electron concentration, and active layer thickness

SIXPOINT MATERIALS INC

Method for testing group III-nitride wafers and group III-nitride wafers with test data

Electronic device using group III nitride semiconductor having specified dislocation density, oxygen/electron concentration, and active layer thickness

Method for testing group III-nitride wafers and group III-nitride wafers with test data

Method for testing group III-nitride wafers and group III-nitride wafers with test data

Bismuth-doped semi-insulating group III nitride wafer and its production method

Method of growing group III nitride crystals

Group III nitride wafer and its production method

Method for making electronic device using group III nitride semiconductor having specified dislocation density oxygen/electron concentration, and active layer thickness

Composite substrate of gallium nitride and metal oxide

HASHIMOTO TADAO

High-pressure vessel for growing group III nitride crystals and method of growing group III nitride crystals using high-pressure vessel and group III nitride crystal

High-pressure vessel for growing group III nitride crystals and method of growing group III nitride crystals using high-pressure vessel and group III nitride crystal

Growth reactor for gallium-nitride crystals using ammonia and hydrogen chloride

Laser slicer of crystal ingots and a method of slicing gallium nitride ingots using a laser slicer

Method for producing group III-nitride wafers and group III-nitride wafers

Gallium nitride bulk crystals and their growth method

Synthesis method of transition metal nitride and transition metal nitride

Gallium nitride bulk crystals and their growth method

NEC CORP

Digital cellular switching system with means for securing uninterrupted data transparency during handoffs

Transmission timing control in a base station for cellular TDMA mobile communication by receiving an up-link signal for a different base station

Wide area cordless telephone system capable of receiving incoming group address calls

Method and arrangement of locating cordless units in wide area cordless telephone system

Communication method of cordless telephone that can always make call as necessary and suppress unnecessary waiting operation to reduce consumption power and cordless telephone

Mobile radio communication system and channel control method therefor

MATSUSHITA ELECTRONICS CORP

Semiconductor substrate, semiconductor device and method of manufacturing the same

Nitride semiconductor laser device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD

Semiconductor substrate, semiconductor device and method of manufacturing the same

Method for growing nitride compound semiconductor

UNIV CALIFORNIA

Opto-electronic and electronic devices using N-face or M-plane GaN substrate prepared with ammonothermal growth

Method for growing group III-nitride crystals in a mixture of supercritical ammonia and nitrogen, and group III-nitride crystals grown thereby

LETTS EDWARD

Methods for producing improved crystallinity group III-nitride crystals from initial group III-nitride seed by ammonothermal growth

Methods for producing GaN nutrient for ammonothermal growth

FUJI ELECTRIC CO LTD

Vibrating type transducer

NIPPON TELEGRAPH & TELEPHONE

Radio communication network system comprising a connecting equipment unit operable in different modes

IZUME MASAYUKI

Printer