Inventor
CHANG TING-FU
TW16 patents
⚠️ This page may combine multiple inventors who share the name “CHANG TING-FU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
5 patentsUS11824109B2Nov 21, 2023
Integration of p-channel and n-channel E-FET III-V devices with optimization of device performance
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11522077B2Dec 6, 2022
Integration of p-channel and n-channel E-FET III-V devices with optimization of device performance
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US12272741B2Apr 8, 2025
Integration of p-channel and n-channel E-FET III-V devices with optimization of device performance
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11843047B2Dec 12, 2023
Integration of p-channel and n-channel E-FET III-V devices without parasitic channels
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11349023B2May 31, 2022
Integration of p-channel and n-channel E-FET III-V devices without parasitic channels
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
HUANG CHIH-FANG
5 patentsUS8710551B2Apr 29, 2014
High electron mobility transistor and manufacturing method thereof
HUANG CHIH-FANG0 citations50
US9362381B2Jun 7, 2016
Insulated gate bipolar transistor with a lateral gate structure and gallium nitride substrate and manufacturing method thereof
HUANG CHIH-FANG0 citations48
US9252219B2Feb 2, 2016
Insulated gate bipolar transistor with a lateral gate structure and gallium nitride substrate
HUANG CHIH-FANG0 citations48
US9105757B2Aug 11, 2015
Junction barrier Schottky diode and manufacturing method thereof
HUANG CHIH-FANG1 citations48
US8981429B2Mar 17, 2015
High electron mobility transistor and manufacturing method thereof
HUANG CHIH-FANG0 citations36