P

Inventor

LI YUJUN

CN43 patents
⚠️ This page may combine multiple inventors who share the name “LI YUJUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

IBM

20 patents
US7470570B2Dec 30, 2008

Process for fabrication of FinFETs

IBM138 citations99
US7018551B2Mar 28, 2006

Pull-back method of forming fins in FinFets

IBM84 citations97
US7410844B2Aug 12, 2008

Device fabrication by anisotropic wet etch

IBM53 citations96
US7294879B2Nov 13, 2007

Vertical MOSFET with dual work function materials

IBM21 citations93
US6444548B2Sep 3, 2002

Bitline diffusion with halo for improved array threshold voltage control

IBM35 citations93
US6329704B1Dec 11, 2001

Ultra-shallow junction dopant layer having a peak concentration within a dielectric layer

IBM34 citations92
US6252806B1Jun 26, 2001

Multi-generator, partial array Vt tracking system to improve array retention time

IBM21 citations92
US6930004B2Aug 16, 2005

Self-aligned drain/channel junction in vertical pass transistor DRAM cell design for device scaling

IBM16 citations83
US6964892B2Nov 15, 2005

N-channel metal oxide semiconductor (NMOS) driver circuit and method of making same

IBM10 citations74
US6433397B1Aug 13, 2002

N-channel metal oxide semiconductor (NMOS) driver circuit and method of making same

IBM7 citations74
US6387782B2May 14, 2002

Process of forming an ultra-shallow junction dopant layer having a peak concentration within a dielectric layer

IBM6 citations74
US6905976B2Jun 14, 2005

Structure and method of forming a notched gate field effect transistor

IBM9 citations73
US6348394B1Feb 19, 2002

Method and device for array threshold voltage control by trapped charge in trench isolation

IBM7 citations73
US7696539B2Apr 13, 2010

Device fabrication by anisotropic wet etch

IBM3 citations63
US7666741B2Feb 23, 2010

Corner clipping for field effect devices

IBM5 citations63
US7354822B2Apr 8, 2008

Method of forming a MOSFET with dual work function materials

IBM3 citations63
US7015552B2Mar 21, 2006

Dual work function semiconductor structure with borderless contact and method of fabricating the same

IBM3 citations63
US6908815B2Jun 21, 2005

Dual work function semiconductor structure with borderless contact and method of fabricating the same

IBM4 citations63
US7129564B2Oct 31, 2006

Structure and method of forming a notched gate field effect transistor

IBM2 citations62
US6642584B2Nov 4, 2003

Dual work function semiconductor structure with borderless contact and method of fabricating the same

IBM0 citations52

PROCTER & GAMBLE

4 patents

SHANGHAI TIANMA AM OLED CO LTD

3 patents

SHANGHAI TIANMA AM-OLED CO LTD

3 patents

SHANGHAI TIANMA MICRO ELECT CO

3 patents

INFINEON TECHNOLOGIES AG

2 patents

INFINEON TECHNOLOGIES CORP

1 patent

UNIV SHANDONG

1 patent

HUAWEI TECH CO LTD

1 patent

SHANGHAI TIANMA MICROELECTRONICS CO LTD

1 patent

BEINTNER JOCHEN

1 patent

BEIJING ELECTRIC VEHICLE CO LTD

1 patent

COTTON SCIENCE RES INSTITUTE OF HUNAN

1 patent

WENXIU SUN

1 patent