Inventor
CHEN JIAN-HAO
TW62 patents
⚠️ This page may combine multiple inventors who share the name “CHEN JIAN-HAO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
38 patentsUS10468500B1Nov 5, 2019
FinFET fabrication methods
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US12255104B2Mar 18, 2025
Semiconductor device and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations74
US11276766B2Mar 15, 2022
FinFET fabrication methods
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10991800B2Apr 27, 2021
Method for FinFET LDD doping
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10396156B2Aug 27, 2019
Method for FinFET LDD doping
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11894276B2Feb 6, 2024
Multiple gate field-effect transistors having various gate oxide thicknesses and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US12068371B2Aug 20, 2024
Method for FinFET LDD doping
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11777004B2Oct 3, 2023
Fin field effect transistor (FinFET) device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12463040B2Nov 4, 2025
Methods for doping high-K metal gates for tuning threshold voltages
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12317574B2May 27, 2025
Device providing multiple threshold voltages and methods of making the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12272557B2Apr 8, 2025
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12266575B2Apr 1, 2025
Multiple gate field-effect transistors having various gate oxide thicknesses and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12171091B2Dec 17, 2024
Multi-layer high-k gate dielectric structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12068392B2Aug 20, 2024
FinFET fabrication methods
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12057486B2Aug 6, 2024
Metal gate cap
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12041760B2Jul 16, 2024
Multi-layer high-k gate dielectric structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12040235B2Jul 16, 2024
Semiconductor device and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12009400B2Jun 11, 2024
Device providing multiple threshold voltages and methods of making the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11862468B2Jan 2, 2024
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11605720B2Mar 14, 2023
Metal gate cap
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11437280B2Sep 6, 2022
Semiconductor device and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11342188B2May 24, 2022
Methods for doping high-k metal gates for tuning threshold voltages
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12444608B2Oct 14, 2025
Structure having gate spacers with projecting portions extending into a gate dielectric
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12433011B2Sep 30, 2025
Post gate dielectric processing for semiconductor device fabrication
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12302627B2May 13, 2025
Semiconductor device with non-conformal gate dielectric layers
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12218213B2Feb 4, 2025
Semiconductor device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US11908745B2Feb 20, 2024
Semiconductor device with non-conformal gate dieletric layers
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11735484B2Aug 22, 2023
Post gate dielectric processing for semiconductor device fabrication
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11605563B2Mar 14, 2023
Semiconductor device with non-conformal gate dielectric layers
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11398384B2Jul 26, 2022
Methods for manufacturing a transistor gate by non-directional implantation of impurities in a gate spacer
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US12074206B2Aug 27, 2024
Integrated circuit device with improved reliability
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12575172B2Mar 10, 2026
Metal gate electrode formation of memory devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US12154964B2Nov 26, 2024
Metal gates with layers for transistor threshold voltage tuning and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US12426309B2Sep 23, 2025
Method of manufacturing semiconductor devices and semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations55
US12336244B2Jun 17, 2025
Metal caps for gate structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12288811B2Apr 29, 2025
Metal gate for gate-all-around devices and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9449828B2Sep 20, 2016
Method of forming metal gate electrode
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12593496B2Mar 31, 2026
Multiple threshold voltage implementation through lanthanum incorporation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
CHEN JIAN-HAO
3 patentsUS8334198B2Dec 18, 2012
Method of fabricating a plurality of gate structures
CHEN JIAN-HAO50 citations92
US8952462B2Feb 10, 2015
Method and apparatus of forming a gate
CHEN JIAN-HAO4 citations72
US9070624B2Jun 30, 2015
Semiconductor device including polysilicon resistor and metal gate resistor and methods of fabricating thereof
CHEN JIAN-HAO4 citations71
IND TECH RES INST
2 patentsTAIWAN SEMICONDUCTOR MFG
2 patentsUNIV NAT TAIWAN NORMAL
2 patentsLEE DA-YUAN
1 patentLU CHIA-YU
1 patentLEE WEI-YANG
1 patentShowing the top 50 of 62 patents by PatentIndex Score.