Inventor
KOTHANDARAMAN CHANDRASEKARA
US16 patents
⚠️ This page may combine multiple inventors who share the name “KOTHANDARAMAN CHANDRASEKARA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
15 patentsUS9911914B1Mar 6, 2018
Sub-lithographic magnetic tunnel junctions for magnetic random access memory devices
IBM14 citations92
US6972614B2Dec 6, 2005
Circuits associated with fusible elements for establishing and detecting of the states of those elements
IBM35 citations89
US10423805B2Sep 24, 2019
Encryption engine with an undetectable/tamper-proof private key in late node CMOS technology
IBM5 citations84
US7551470B2Jun 23, 2009
Non volatile memory RAD-hard (NVM-rh) system
IBM18 citations84
US10230043B2Mar 12, 2019
Boron segregation in magnetic tunnel junctions
IBM2 citations73
US9970830B2May 15, 2018
Approach to measuring strain effects using ring oscillators
IBM3 citations71
US11411175B2Aug 9, 2022
Self-aligned and misalignment-tolerant landing pad for magnetoresistive random access memory
IBM0 citations62
US11216595B2Jan 4, 2022
Encryption engine with an undetectable/tamper-proof private key in late node CMOS technology
IBM0 citations62
US10997321B2May 4, 2021
Encryption engine with an undetectable/tamper proof private key in late node CMOS technology
IBM0 citations62
US10804458B2Oct 13, 2020
Boron segregation in magnetic tunnel junctions
IBM0 citations52
US10778422B2Sep 15, 2020
Lithographically defined intrinsic identifier
IBM0 citations52
US10721082B2Jul 21, 2020
Screen printed phosphors for intrinsic chip identifiers
IBM0 citations52
US10566524B2Feb 18, 2020
Sub-lithographic magnetic tunnel junctions for magnetic random access memory devices
IBM0 citations52
US9698339B1Jul 4, 2017
Magnetic tunnel junction encapsulation using hydrogenated amorphous semiconductor material
IBM1 citations51
US10551254B2Feb 4, 2020
Approach to measuring strain effects using ring oscillators
IBM0 citations50