P

Inventor

YANG SEUNG-YEUL

US15 patents
⚠️ This page may combine multiple inventors who share the name “YANG SEUNG-YEUL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SANDISK TECHNOLOGIES LLC

11 patents
US10937809B1Mar 2, 2021

Three-dimensional memory device containing ferroelectric memory elements encapsulated by transition metal nitride materials and method of making thereof

SANDISK TECHNOLOGIES LLC25 citations94
US10381559B1Aug 13, 2019

Three-dimensional phase change memory array including discrete middle electrodes and methods of making the same

SANDISK TECHNOLOGIES LLC46 citations94
US10381409B1Aug 13, 2019

Three-dimensional phase change memory array including discrete middle electrodes and methods of making the same

SANDISK TECHNOLOGIES LLC35 citations94
US11996462B2May 28, 2024

Ferroelectric field effect transistors having enhanced memory window and methods of making the same

SANDISK TECHNOLOGIES LLC2 citations73
US11309332B2Apr 19, 2022

Three-dimensional memory device containing ferroelectric memory elements encapsulated by transition metal-containing conductive elements and method of making thereof

SANDISK TECHNOLOGIES LLC3 citations73
US11302716B2Apr 12, 2022

Three-dimensional memory device including ferroelectric-metal-insulator memory cells and methods of making the same

SANDISK TECHNOLOGIES LLC3 citations73
US11282848B2Mar 22, 2022

Three-dimensional memory device including ferroelectric-metal-insulator memory cells and methods of making the same

SANDISK TECHNOLOGIES LLC3 citations73
US11239254B2Feb 1, 2022

Three-dimensional memory device containing epitaxial ferroelectric memory elements and methods for forming the same

SANDISK TECHNOLOGIES LLC3 citations73
US11121140B2Sep 14, 2021

Ferroelectric tunnel junction memory device with integrated ovonic threshold switches

SANDISK TECHNOLOGIES LLC4 citations73
US11024648B2Jun 1, 2021

Ferroelectric memory devices including a stack of ferroelectric and antiferroelectric layers and method of making the same

SANDISK TECHNOLOGIES LLC6 citations73
US11545506B2Jan 3, 2023

Ferroelectric field effect transistors having enhanced memory window and methods of making the same

SANDISK TECHNOLOGIES LLC0 citations62

SEAGATE TECHNOLOGY LLC

4 patents