Inventor
YIP AARON S
US38 patents
⚠️ This page may combine multiple inventors who share the name “YIP AARON S”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
37 patentsUS9589978B1Mar 7, 2017
Memory devices with stairs in a staircase coupled to tiers of memory cells and to pass transistors directly under the staircase
MICRON TECHNOLOGY INC55 citations98
US9767909B1Sep 19, 2017
Memory cell programming utilizing conditional enabling of memory cells
MICRON TECHNOLOGY INC11 citations92
US9070442B2Jun 30, 2015
Memory devices with local and global devices at substantially the same level above stacked tiers of memory cells and methods
MICRON TECHNOLOGY INC18 citations92
US11545456B2Jan 3, 2023
Microelectronic devices, electronic systems having a memory array region and a control logic region, and methods of forming microelectronic devices
MICRON TECHNOLOGY INC14 citations86
US10978478B1Apr 13, 2021
Block-on-block memory array architecture using bi-directional staircases
MICRON TECHNOLOGY INC11 citations86
US11562791B1Jan 24, 2023
Memory devices with four data line bias levels
MICRON TECHNOLOGY INC6 citations84
US10014061B1Jul 3, 2018
Methods and apparatus having multiple select gates of different ranges of threshold voltages connected in series with memory cells
MICRON TECHNOLOGY INC7 citations84
US11688463B2Jun 27, 2023
Vertical string driver for memory array
MICRON TECHNOLOGY INC2 citations73
US11335700B2May 17, 2022
Block-on-block memory array architecture using bi-directional staircases
MICRON TECHNOLOGY INC2 citations73
US11094379B1Aug 17, 2021
Memory cell programming
MICRON TECHNOLOGY INC3 citations73
US11094357B2Aug 17, 2021
Memory devices with user-defined tagging mechanism
MICRON TECHNOLOGY INC2 citations73
US10289484B2May 14, 2019
Apparatuses and methods for generating probabilistic information with current integration sensing
MICRON TECHNOLOGY INC3 citations73
US10891191B2Jan 12, 2021
Apparatuses and methods for generating probabilistic information with current integration sensing
MICRON TECHNOLOGY INC0 citations63
US9251860B2Feb 2, 2016
Memory devices with local and global devices at substantially the same level above stacked tiers of memory cells and methods
MICRON TECHNOLOGY INC2 citations63
US12520492B2Jan 6, 2026
Sub-block definition in a memory device using segmented source plates
MICRON TECHNOLOGY INC0 citations62
US12114499B2Oct 8, 2024
Block-on-block memory array architecture using bi-directional staircases
MICRON TECHNOLOGY INC0 citations62
US12080351B2Sep 3, 2024
Using non-segregated cells as drain-side select gates for sub-blocks in a memory device
MICRON TECHNOLOGY INC0 citations62
US12080700B2Sep 3, 2024
Microelectronic devices including control logic regions
MICRON TECHNOLOGY INC0 citations62
US12068272B2Aug 20, 2024
Microelectronic devices having a memory array region, a control logic region, and signal routing structures
MICRON TECHNOLOGY INC0 citations62
US11636886B2Apr 25, 2023
Memory devices with user-defined tagging mechanism
MICRON TECHNOLOGY INC0 citations62
US11587919B2Feb 21, 2023
Microelectronic devices, related electronic systems, and methods of forming microelectronic devices
MICRON TECHNOLOGY INC0 citations62
US11574685B2Feb 7, 2023
Apparatus for memory cell programming
MICRON TECHNOLOGY INC0 citations62
US11404125B2Aug 2, 2022
Memory cell programming applying a programming pulse having different voltage levels
MICRON TECHNOLOGY INC0 citations62
US11329058B2May 10, 2022
Microelectronic devices and memory devices
MICRON TECHNOLOGY INC0 citations62
US11081165B2Aug 3, 2021
Memories for decoding memory access addresses for access operations
MICRON TECHNOLOGY INC0 citations62
US11043272B2Jun 22, 2021
Memory cell programming with a program pulse having a plurality of different voltage levels
MICRON TECHNOLOGY INC0 citations62
US11915758B2Feb 27, 2024
Memory devices with four data line bias levels
MICRON TECHNOLOGY INC0 citations61
US10714166B2Jul 14, 2020
Apparatus and methods for decoding memory access addresses for access operations
MICRON TECHNOLOGY INC0 citations52
US10629266B2Apr 21, 2020
Memory cell programming with a programming pulse having plurality of different voltage levels
MICRON TECHNOLOGY INC0 citations52
US10535408B2Jan 14, 2020
Erasing memory cells
MICRON TECHNOLOGY INC0 citations52
US10332601B2Jun 25, 2019
Erasing memory cells sequentially
MICRON TECHNOLOGY INC0 citations52
US10332603B2Jun 25, 2019
Access line management in a memory device
MICRON TECHNOLOGY INC0 citations52
US10037806B2Jul 31, 2018
Memory cell programming using VgVt value
MICRON TECHNOLOGY INC0 citations52
US9875802B2Jan 23, 2018
Access line management in a memory device
MICRON TECHNOLOGY INC0 citations52
US9514829B2Dec 6, 2016
Access line management in a memory device
MICRON TECHNOLOGY INC0 citations52
US9218884B2Dec 22, 2015
Access line management in a memory device
MICRON TECHNOLOGY INC0 citations52
US12271592B2Apr 8, 2025
Independent plane architecture in a memory device
MICRON TECHNOLOGY INC0 citations50