P

Inventor

WANG TZU-JUI

TW52 patents
⚠️ This page may combine multiple inventors who share the name “WANG TZU-JUI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

36 patents
US9923013B1Mar 20, 2018

Sensor device, image sensor array and manufacturing method of sensor device

TAIWAN SEMICONDUCTOR MFG CO LTD32 citations94
US10177186B2Jan 8, 2019

Pixel structure of image sensor and method of forming same

TAIWAN SEMICONDUCTOR MFG CO LTD11 citations92
US11227889B2Jan 18, 2022

Extra doped region for back-side deep trench isolation

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations84
US10672934B2Jun 2, 2020

SPAD image sensor and associated fabricating method

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US10276618B2Apr 30, 2019

Extra doped region for back-side deep trench isolation

TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US9954022B2Apr 24, 2018

Extra doped region for back-side deep trench isolation

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US9659987B2May 23, 2017

Approach for reducing pixel pitch using vertical transfer gates and implant isolation regions

TAIWAN SEMICONDUCTOR MFG CO LTD10 citations84
US9620548B1Apr 11, 2017

Image sensor with wide contact

TAIWAN SEMICONDUCTOR MFG CO LTD14 citations84
US9443836B2Sep 13, 2016

Forming pixel units of image sensors through bonding two chips

TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US12507490B2Dec 23, 2025

Semiconductor device including germanium region disposed in semiconductor substrate

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations74
US12062671B2Aug 13, 2024

Image sensor with photosensitivity enhancement region

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11264525B2Mar 1, 2022

SPAD image sensor and associated fabricating method

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10510912B2Dec 17, 2019

Image sensor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10510789B2Dec 17, 2019

Extra doped region for back-side deep trench isolation

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10096645B2Oct 9, 2018

Method and apparatus for image sensor packaging

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9917123B2Mar 13, 2018

Method and apparatus for image sensor packaging

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US9887234B2Feb 6, 2018

CMOS image sensor and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US12451391B2Oct 21, 2025

Image sensor with dual trench isolation structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12211876B2Jan 28, 2025

Extra doped region for back-side deep trench isolation

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11728366B2Aug 15, 2023

Extra doped region for back-side deep trench isolation

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11705360B2Jul 18, 2023

Image sensor with dual trench isolation structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12426390B2Sep 23, 2025

Passivation for a vertical transfer gate in a pixel sensor

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12396289B2Aug 19, 2025

Germanium-containing photodetector and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12051763B2Jul 30, 2024

Germanium-containing photodetector and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11121159B2Sep 14, 2021

Pixel structure of image sensor having dielectric layer surrounding photo conversion layer and color filter

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12581764B2Mar 17, 2026

Bond structure having shielding structures for stacked IC chips

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12191336B2Jan 7, 2025

Image sensor having a gate dielectric structure for improved device scaling

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10510790B2Dec 17, 2019

High-k dielectric liners in shallow trench isolations

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10468443B2Nov 5, 2019

Pixel structure of image sensor and method of forming same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10361233B2Jul 23, 2019

High-k dielectric liners in shallow trench isolations

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10164133B2Dec 25, 2018

Image sensor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9978805B2May 22, 2018

Method for manufacturing image sensor structure having wide contact

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations52
US9722109B2Aug 1, 2017

Image sensor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US11837613B2Dec 5, 2023

Germanium-containing photodetector and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US12557405B2Feb 17, 2026

Structure and method for backside-illuminated image device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US12408466B2Sep 2, 2025

High-speed readout image sensor

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50

TAIWAN SEMICONDUCTOR MFG

7 patents

CHEN SZU-YING

5 patents

WANG TZU-JUI

2 patents

Showing the top 50 of 52 patents by PatentIndex Score.