P

Inventor

HSU TZU-HSUAN

TW177 patents
⚠️ This page may combine multiple inventors who share the name “HSU TZU-HSUAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG

17 patents
US7999342B2Aug 16, 2011

Image sensor element for backside-illuminated sensor

TAIWAN SEMICONDUCTOR MFG44 citations98
US7078779B2Jul 18, 2006

Enhanced color image sensor device and method of making the same

TAIWAN SEMICONDUCTOR MFG59 citations96
US9123615B2Sep 1, 2015

Vertically integrated image sensor chips and methods for forming the same

TAIWAN SEMICONDUCTOR MFG11 citations93
US7232697B2Jun 19, 2007

Semiconductor device having enhanced photo sensitivity and method for manufacture thereof

TAIWAN SEMICONDUCTOR MFG16 citations93
US9190345B1Nov 17, 2015

Semiconductor devices and methods of manufacture thereof

TAIWAN SEMICONDUCTOR MFG24 citations92
US7387907B2Jun 17, 2008

Image sensor with optical guard ring and fabrication method thereof

TAIWAN SEMICONDUCTOR MFG26 citations92
US7122840B2Oct 17, 2006

Image sensor with optical guard ring and fabrication method thereof

TAIWAN SEMICONDUCTOR MFG19 citations92
US7638852B2Dec 29, 2009

Method of making wafer structure for backside illuminated color image sensor

TAIWAN SEMICONDUCTOR MFG13 citations91
US9318640B2Apr 19, 2016

Method and apparatus for image sensor packaging

TAIWAN SEMICONDUCTOR MFG6 citations84
US9312294B2Apr 12, 2016

Semiconductor devices, methods of manufacturing thereof, and image sensor devices

TAIWAN SEMICONDUCTOR MFG6 citations84
US9293502B2Mar 22, 2016

Semiconductor switching device separated by device isolation

TAIWAN SEMICONDUCTOR MFG4 citations84
US7973380B2Jul 5, 2011

Method for providing metal extension in backside illuminated sensor for wafer level testing

TAIWAN SEMICONDUCTOR MFG18 citations84
US7838325B2Nov 23, 2010

Method to optimize substrate thickness for image sensor device

TAIWAN SEMICONDUCTOR MFG8 citations84
US7656000B2Feb 2, 2010

Photodetector for backside-illuminated sensor

TAIWAN SEMICONDUCTOR MFG12 citations84
US7485940B2Feb 3, 2009

Guard ring structure for improving crosstalk of backside illuminated image sensor

TAIWAN SEMICONDUCTOR MFG9 citations84
US6982443B2Jan 3, 2006

Hollow dielectric for image sensor

TAIWAN SEMICONDUCTOR MFG11 citations84
US9041206B2May 26, 2015

Interconnect structure and method

TAIWAN SEMICONDUCTOR MFG11 citations83

TAIWAN SEMICONDUCTOR MFG CO LTD

15 patents
US11694979B2Jul 4, 2023

Isolation structure for bond pad structure

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations86
US10991667B2Apr 27, 2021

Isolation structure for bond pad structure

TAIWAN SEMICONDUCTOR MFG CO LTD9 citations86
US10522586B2Dec 31, 2019

Apparatus for reducing optical cross-talk in image sensors

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations84
US9991307B2Jun 5, 2018

Stacked grid design for improved optical performance and isolation

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US9966412B2May 8, 2018

Method for reducing optical cross-talk in image sensors

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations84
US9871070B2Jan 16, 2018

Voltage biased metal shielding and deep trench isolation for backside illuminated (BSI) image sensors

TAIWAN SEMICONDUCTOR MFG CO LTD10 citations84
US9711562B2Jul 18, 2017

Apparatus and method for reducing optical cross-talk in image sensors

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US9666630B2May 30, 2017

Semiconductor devices, methods of manufacturing thereof, and image sensor devices

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US9620548B1Apr 11, 2017

Image sensor with wide contact

TAIWAN SEMICONDUCTOR MFG CO LTD14 citations84
US9473753B2Oct 18, 2016

Apparatus and method for reducing optical cross-talk in image sensors

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US9455158B2Sep 27, 2016

3DIC interconnect devices and methods of forming same

TAIWAN SEMICONDUCTOR MFG CO LTD10 citations84
US11069731B2Jul 20, 2021

Apparatus for reducing optical cross-talk in image sensors

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10535706B2Jan 14, 2020

Interconnect structure for stacked device and method

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10157959B2Dec 18, 2018

Interconnect structure for stacked device and method

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9941249B2Apr 10, 2018

Multi-wafer stacking by Ox-Ox bonding

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73

MACRONIX INT CO LTD

14 patents
US7450423B2Nov 11, 2008

Methods of operating non-volatile memory cells having an oxide/nitride multilayer insulating structure

MACRONIX INT CO LTD278 citations98
US7209390B2Apr 24, 2007

Operation scheme for spectrum shift in charge trapping non-volatile memory

MACRONIX INT CO LTD111 citations98
US6937511B2Aug 30, 2005

Circuit and method for programming charge storage memory cells

MACRONIX INT CO LTD143 citations98
US7590005B2Sep 15, 2009

Program and erase methods with substrate transient hot carrier injections in a non-volatile memory

MACRONIX INT CO LTD16 citations93
US7242622B2Jul 10, 2007

Methods to resolve hard-to-erase condition in charge trapping non-volatile memory

MACRONIX INT CO LTD24 citations93
US7811890B2Oct 12, 2010

Vertical channel transistor structure and manufacturing method thereof

MACRONIX INT CO LTD35 citations92
US11221827B1Jan 11, 2022

In-memory computation device

MACRONIX INT CO LTD9 citations86
US7881112B2Feb 1, 2011

Program and erase methods with substrate transient hot carrier injections in a non-volatile memory

MACRONIX INT CO LTD7 citations84
US7763927B2Jul 27, 2010

Non-volatile memory device having a nitride-oxide dielectric layer

MACRONIX INT CO LTD10 citations84
US7355897B2Apr 8, 2008

Methods to resolve hard-to-erase condition in charge trapping non-volatile memory

MACRONIX INT CO LTD9 citations84
US7038928B1May 2, 2006

Method of determining optimal voltages for operating two-side non-volatile memory and the operating methods

MACRONIX INT CO LTD13 citations84
US7855411B2Dec 21, 2010

Memory cell

MACRONIX INT CO LTD5 citations74
US7085168B2Aug 1, 2006

Programming method for controlling memory threshold voltage distribution

MACRONIX INT CO LTD10 citations74
US6952038B2Oct 4, 2005

3D polysilicon ROM and method of fabrication thereof

MACRONIX INT CO LTD7 citations74

LIN JENG-SHYAN

1 patent

LUE HANG-TING

1 patent

HSU TZU-HSUAN

1 patent

SHIAU GWO-YUH

1 patent

Showing the top 50 of 177 patents by PatentIndex Score.