Inventor
HIRAO TAKAYUKI
JP36 patents
⚠️ This page may combine multiple inventors who share the name “HIRAO TAKAYUKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NGK INSULATORS LTD
19 patentsUS8795431B2Aug 5, 2014
Method for producing gallium nitride layer and seed crystal substrate used in same
NGK INSULATORS LTD7 citations81
US11309455B2Apr 19, 2022
Group 13 element nitride layer, free-standing substrate and functional element
NGK INSULATORS LTD2 citations73
US9045844B2Jun 2, 2015
Method for peeling group 13 element nitride film
NGK INSULATORS LTD5 citations73
US9041004B2May 26, 2015
Films of nitrides of group 13 elements and layered body including the same
NGK INSULATORS LTD3 citations63
US11611017B2Mar 21, 2023
Group 13 element nitride layer, free-standing substrate and functional element
NGK INSULATORS LTD1 citations62
US11088299B2Aug 10, 2021
Group 13 element nitride layer, free-standing substrate and functional element
NGK INSULATORS LTD1 citations62
US11011678B2May 18, 2021
Group 13 element nitride layer, free-standing substrate and functional element
NGK INSULATORS LTD1 citations62
US10947638B2Mar 16, 2021
Underlying substrate including a seed crystal layer of a group 13 nitride having stripe-shaped projections and recesses and an off-angle in a direction of an a-axis
NGK INSULATORS LTD0 citations62
US12550490B2Feb 10, 2026
Group-III element nitride semiconductor substrate
NGK INSULATORS LTD0 citations60
US11035055B2Jun 15, 2021
Group 13 nitride layer, composite substrate, and functional element
NGK INSULATORS LTD0 citations59
US11555257B2Jan 17, 2023
Group 13 element nitride layer, free-standing substrate and functional element
NGK INSULATORS LTD0 citations52
US10804432B2Oct 13, 2020
Free-standing substrate comprising polycrystalline group 13 element nitride and light-emitting element using same
NGK INSULATORS LTD0 citations52
US10734548B2Aug 4, 2020
Free-standing substrate comprising polycrystalline group 13 element nitride and light-emitting element using same
NGK INSULATORS LTD0 citations52
US7988784B2Aug 2, 2011
Method for manufacturing III metal nitride single crystal
NGK INSULATORS LTD0 citations52
US10156022B2Dec 18, 2018
Method for producing nitride of group-13 element, and melt composition
NGK INSULATORS LTD0 citations51
US10041186B2Aug 7, 2018
Method for producing nitride crystal
NGK INSULATORS LTD1 citations51
US8729672B2May 20, 2014
Method for growing group 13 nitride crystal and group 13 nitride crystal
NGK INSULATORS LTD0 citations51
US12392053B2Aug 19, 2025
Group 13 element nitride crystal layer, self-supporting substrate, and functional element
NGK INSULATORS LTD0 citations47
US10190233B2Jan 29, 2019
Method and device for producing a group 13 element nitride crystal using a shielding object
NGK INSULATORS LTD0 citations37
NISSAN MOTOR
4 patentsUS7981572B2Jul 19, 2011
Fuel cell and production of fuel cell stack
NISSAN MOTOR10 citations82
US10756354B2Aug 25, 2020
Membrane catalyst layer assembly production method and membrane catalyst layer assembly production device
NISSAN MOTOR2 citations70
US10553876B2Feb 4, 2020
Method and device for modifying catalyst layer
NISSAN MOTOR0 citations44
US9793553B2Oct 17, 2017
Method and apparatus for manufacturing separator for fuel cell
NISSAN MOTOR0 citations41