Inventor
SUDARSHAN TANGALI S
US14 patents
⚠️ This page may combine multiple inventors who share the name “SUDARSHAN TANGALI S”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
UNIV SOUTH CAROLINA
10 patentsUS8900979B2Dec 2, 2014
Pretreatment method for reduction and/or elimination of basal plane dislocations close to epilayer/substrate interface in growth of SiC epitaxial films
UNIV SOUTH CAROLINA6 citations80
US7220978B2May 22, 2007
System and method for detecting defects in semiconductor wafers
UNIV SOUTH CAROLINA16 citations80
US9644288B2May 9, 2017
Pretreatment method for reduction and/or elimination of basal plane dislocations close to epilayer/substrate interface in growth of SiC epitaxial films
UNIV SOUTH CAROLINA4 citations69
US9644287B2May 9, 2017
Pretreatment method for reduction and/or elimination of basal plane dislocations close to epilayer/substrate interface in growth of SiC epitaxial films
UNIV SOUTH CAROLINA2 citations69
US4780176AOct 25, 1988
Method of wetting metals
UNIV SOUTH CAROLINA12 citations69
US9966491B2May 8, 2018
Optically switched graphene/4H-SiC junction bipolar transistor
UNIV SOUTH CAROLINA4 citations65
US11680333B2Jun 20, 2023
Defect engineered high quality multilayer epitaxial graphene growth with thickness controllability
UNIV SOUTH CAROLINA0 citations50
US10260166B2Apr 16, 2019
Method of growing high quality, thick SiC epitaxial films by eliminating silicon gas phase nucleation and suppressing parasitic deposition
UNIV SOUTH CAROLINA0 citations48
US9885124B2Feb 6, 2018
Method of growing high quality, thick SiC epitaxial films by eliminating silicon gas phase nucleation and suppressing parasitic deposition
UNIV SOUTH CAROLINA0 citations48
US7061021B2Jun 13, 2006
System and method for fabricating diodes
UNIV SOUTH CAROLINA1 citations45
SUDARSHAN TANGALI S
2 patentsUS9842898B2Dec 12, 2017
Methods of growing a silicon carbide epitaxial layer on a substrate to increase and control carrier lifetime
SUDARSHAN TANGALI S1 citations40
US8574528B2Nov 5, 2013
Methods of growing a silicon carbide epitaxial layer on a substrate to increase and control carrier lifetime
SUDARSHAN TANGALI S0 citations40