Inventor
RANA TAWHID
US6 patents
Patents
6 patentsUS8900979B2Dec 2, 2014
Pretreatment method for reduction and/or elimination of basal plane dislocations close to epilayer/substrate interface in growth of SiC epitaxial films
UNIV SOUTH CAROLINA6 citations80
US9644288B2May 9, 2017
Pretreatment method for reduction and/or elimination of basal plane dislocations close to epilayer/substrate interface in growth of SiC epitaxial films
UNIV SOUTH CAROLINA4 citations69
US9644287B2May 9, 2017
Pretreatment method for reduction and/or elimination of basal plane dislocations close to epilayer/substrate interface in growth of SiC epitaxial films
UNIV SOUTH CAROLINA2 citations69
US11680333B2Jun 20, 2023
Defect engineered high quality multilayer epitaxial graphene growth with thickness controllability
UNIV SOUTH CAROLINA0 citations50
US10260166B2Apr 16, 2019
Method of growing high quality, thick SiC epitaxial films by eliminating silicon gas phase nucleation and suppressing parasitic deposition
UNIV SOUTH CAROLINA0 citations48
US9885124B2Feb 6, 2018
Method of growing high quality, thick SiC epitaxial films by eliminating silicon gas phase nucleation and suppressing parasitic deposition
UNIV SOUTH CAROLINA0 citations48