Inventor
TOKIGUCHI KATSUMI
JP19 patents
⚠️ This page may combine multiple inventors who share the name “TOKIGUCHI KATSUMI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HITACHI LTD
18 patentsUS5945681AAug 31, 1999
Ion implanting apparatus capable of preventing discharge flaw production on reverse side surface of wafer
HITACHI LTD53 citations96
US4543465ASep 24, 1985
Microwave plasma source having improved switching operation from plasma ignition phase to normal ion extraction phase
HITACHI LTD108 citations95
US6043499AMar 28, 2000
Charge-up prevention method and ion implanting apparatus
HITACHI LTD18 citations92
US5925886AJul 20, 1999
Ion source and an ion implanting apparatus using it
HITACHI LTD22 citations92
US5053678AOct 1, 1991
Microwave ion source
HITACHI LTD48 citations92
US4801847AJan 31, 1989
Charged particle accelerator using quadrupole electrodes
HITACHI LTD26 citations92
US4658143AApr 14, 1987
Ion source
HITACHI LTD29 citations92
US4633138ADec 30, 1986
Ion implanter
HITACHI LTD43 citations92
US4533831AAug 6, 1985
Non-mass-analyzed ion implantation
HITACHI LTD31 citations92
US4409520AOct 11, 1983
Microwave discharge ion source
HITACHI LTD29 citations92
US4393333AJul 12, 1983
Microwave plasma ion source
HITACHI LTD38 citations90
US4058748ANov 15, 1977
Microwave discharge ion source
HITACHI LTD23 citations81
US5349196ASep 20, 1994
Ion implanting apparatus
HITACHI LTD9 citations73
US4316090AFeb 16, 1982
Microwave plasma ion source
HITACHI LTD17 citations73
US6104025AAug 15, 2000
Ion implanting apparatus capable of preventing discharge flaw production on reverse side surface of wafer
HITACHI LTD4 citations62
US5506472AApr 9, 1996
Variable-frequency type radio-frequency quadrupole accelerator including quadrupole cooling means
HITACHI LTD4 citations61
US4629930ADec 16, 1986
Plasma ion source
HITACHI LTD4 citations60
US5729027AMar 17, 1998
Ion implanter
HITACHI LTD0 citations52