Inventor
DELEONIBUS SIMON
FR25 patents
⚠️ This page may combine multiple inventors who share the name “DELEONIBUS SIMON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
COMMISSARIAT ENERGIE ATOMIQUE
21 patentsUS6091076AJul 18, 2000
Quantum WELL MOS transistor and methods for making same
COMMISSARIAT ENERGIE ATOMIQUE150 citations99
US6787845B2Sep 7, 2004
Metal source and drain mos transistor
COMMISSARIAT ENERGIE ATOMIQUE69 citations96
US5314832AMay 24, 1994
Process for the production of a high voltage MIS integrated circuit
COMMISSARIAT ENERGIE ATOMIQUE62 citations96
US6562687B1May 13, 2003
MIS transistor and method for making same on a semiconductor substrate
COMMISSARIAT ENERGIE ATOMIQUE89 citations93
US6867128B2Mar 15, 2005
Method for making an electronic component with self-aligned drain and gate, in damascene architecture
COMMISSARIAT ENERGIE ATOMIQUE26 citations92
US6346450B1Feb 12, 2002
Process for manufacturing MIS transistor with self-aligned metal grid
COMMISSARIAT ENERGIE ATOMIQUE45 citations92
US7666733B2Feb 23, 2010
Method for making a vertical MOS transistor with embedded gate
COMMISSARIAT ENERGIE ATOMIQUE13 citations84
US6150241ANov 21, 2000
Method for producing a transistor with self-aligned contacts and field insulation
COMMISSARIAT ENERGIE ATOMIQUE16 citations84
US7566922B2Jul 28, 2009
Field effect transistor with suitable source, drain and channel materials and integrated circuit comprising same
COMMISSARIAT ENERGIE ATOMIQUE7 citations74
US7022562B2Apr 4, 2006
Field-effect transistor with horizontal self-aligned gates and the production method therefor
COMMISSARIAT ENERGIE ATOMIQUE9 citations74
US5913136AJun 15, 1999
Process for making a transistor with self-aligned source and drain contacts
COMMISSARIAT ENERGIE ATOMIQUE11 citations74
US5897939AApr 27, 1999
Substrate of the silicon on insulator type for the production of transistors and preparation process for such a substrate
COMMISSARIAT ENERGIE ATOMIQUE15 citations74
US6998310B2Feb 14, 2006
Processes for making a single election transistor with a vertical channel
COMMISSARIAT ENERGIE ATOMIQUE8 citations71
US6727179B2Apr 27, 2004
Method for creating an integrated circuit stage wherein fine and large patterns coexist
COMMISSARIAT ENERGIE ATOMIQUE6 citations63
US5973365AOct 26, 1999
MOS transistor and lateral insulating method of a MOS transistor active region
COMMISSARIAT ENERGIE ATOMIQUE5 citations63
US7678635B2Mar 16, 2010
Method of producing a transistor
COMMISSARIAT ENERGIE ATOMIQUE4 citations62
US7466019B2Dec 16, 2008
Rectangular semi-conducting support for microelectronics and method for making same
COMMISSARIAT ENERGIE ATOMIQUE0 citations52
US7425496B2Sep 16, 2008
Method for delineating a conducting element disposed on an insulating layer, device and transistor thus obtained
COMMISSARIAT ENERGIE ATOMIQUE0 citations52
US7820523B2Oct 26, 2010
Fabrication of active areas of different natures directly onto an insulator: application to the single or double gate MOS transistor
COMMISSARIAT ENERGIE ATOMIQUE1 citations51
US7553693B2Jun 30, 2009
Method for making a field effect transistor with diamond-like carbon channel and resulting transistor
COMMISSARIAT ENERGIE ATOMIQUE0 citations42
US7425509B2Sep 16, 2008
Method for forming patterns aligned on either side of a thin film
COMMISSARIAT ENERGIE ATOMIQUE0 citations36