Inventor
CAI JUN
US142 patents
⚠️ This page may combine multiple inventors who share the name “CAI JUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FAIRCHILD SEMICONDUCTOR
14 patentsUS7968400B2Jun 28, 2011
Short channel LV, MV, and HV CMOS devices
FAIRCHILD SEMICONDUCTOR115 citations98
US6873017B2Mar 29, 2005
ESD protection for semiconductor products
FAIRCHILD SEMICONDUCTOR51 citations95
US7977715B2Jul 12, 2011
LDMOS devices with improved architectures
FAIRCHILD SEMICONDUCTOR43 citations94
US7750401B2Jul 6, 2010
Self-aligned complementary LDMOS
FAIRCHILD SEMICONDUCTOR32 citations93
US7355224B2Apr 8, 2008
High voltage LDMOS
FAIRCHILD SEMICONDUCTOR28 citations93
US7649225B2Jan 19, 2010
Asymmetric hetero-doped high-voltage MOSFET (AH2MOS)
FAIRCHILD SEMICONDUCTOR20 citations91
US7180132B2Feb 20, 2007
Enhanced RESURF HVPMOS device with stacked hetero-doping RIM and gradual drift region
FAIRCHILD SEMICONDUCTOR25 citations91
US7125777B2Oct 24, 2006
Asymmetric hetero-doped high-voltage MOSFET (AH2MOS)
FAIRCHILD SEMICONDUCTOR18 citations91
US7045830B1May 16, 2006
High-voltage diodes formed in advanced power integrated circuit devices
FAIRCHILD SEMICONDUCTOR27 citations89
US7888735B2Feb 15, 2011
Integrated complementary low voltage RF-LDMOS
FAIRCHILD SEMICONDUCTOR10 citations84
US7602017B2Oct 13, 2009
Short channel LV, MV, and HV CMOS devices
FAIRCHILD SEMICONDUCTOR15 citations84
US7531888B2May 12, 2009
Integrated latch-up free insulated gate bipolar transistor
FAIRCHILD SEMICONDUCTOR12 citations84
US7745845B2Jun 29, 2010
Integrated low leakage schottky diode
FAIRCHILD SEMICONDUCTOR7 citations74
US6870218B2Mar 22, 2005
Integrated circuit structure with improved LDMOS design
FAIRCHILD SEMICONDUCTOR9 citations74
CHARTERED SEMICONDUCTOR MFG
6 patentsUS7205612B2Apr 17, 2007
Fully silicided NMOS device for electrostatic discharge protection
CHARTERED SEMICONDUCTOR MFG40 citations92
US6417541B1Jul 9, 2002
ESD protection network with field oxide device and bonding pad
CHARTERED SEMICONDUCTOR MFG17 citations84
US6310380B1Oct 30, 2001
Electrostatic discharge protection transistor structure with a trench extending through the source or drain silicide layers
CHARTERED SEMICONDUCTOR MFG18 citations84
US6835985B2Dec 28, 2004
ESD protection structure
CHARTERED SEMICONDUCTOR MFG7 citations73
US6830966B2Dec 14, 2004
Fully silicided NMOS device for electrostatic discharge protection
CHARTERED SEMICONDUCTOR MFG10 citations73
US6329253B1Dec 11, 2001
Thick oxide MOS device used in ESD protection circuit
CHARTERED SEMICONDUCTOR MFG9 citations71
CAI JUN
6 patentsUS8324042B2Dec 4, 2012
Integrated complementary low voltage RF-LDMOS
CAI JUN9 citations84
US8063443B2Nov 22, 2011
Hybrid-mode LDMOS
CAI JUN11 citations84
US7808802B2Oct 5, 2010
Isolated switched-mode power supply with output regulation from primary side
CAI JUN11 citations84
US9745227B2Aug 29, 2017
Method for applying discriminating layer onto porous ceramic filters
CAI JUN13 citations83
US8722263B2May 13, 2014
Feedback control of H2 injection during park based on gas concentration model
CAI JUN11 citations82
US9028946B2May 12, 2015
Ceramic honeycomb structure with applied inorganic skin
CAI JUN9 citations80
NANO SILICON PTE LTD
4 patentsUS6507090B1Jan 14, 2003
Fully silicide cascaded linked electrostatic discharge protection
NANO SILICON PTE LTD19 citations92
US7154150B2Dec 26, 2006
Low triggering N MOS transistor for ESD protection working under fully silicided process without silicide blocks
NANO SILICON PTE LTD12 citations84
US6589833B2Jul 8, 2003
ESD parasitic bipolar transistors with high resistivity regions in the collector
NANO SILICON PTE LTD6 citations73
US6444510B1Sep 3, 2002
Low triggering N MOS transistor for ESD protection working under fully silicided process without silicide blocks
NANO SILICON PTE LTD7 citations73
SHENZHEN GOODIX TECH CO LTD
3 patentsUS10489629B1Nov 26, 2019
Under-screen biometric identification apparatus and electronic device
SHENZHEN GOODIX TECH CO LTD11 citations90
US10565425B2Feb 18, 2020
Under-screen biometric identification apparatus, biometric identification component and terminal device
SHENZHEN GOODIX TECH CO LTD6 citations84
US10515251B2Dec 24, 2019
Screen assembly with a fingerprint module and electronic device
SHENZHEN GOODIX TECH CO LTD3 citations73
TEXAS INSTRUMENTS INC
3 patentsUS10529804B2Jan 7, 2020
Integrated circuit, LDMOS with trapezoid JFET, bottom gate and ballast drift and fabrication method
TEXAS INSTRUMENTS INC4 citations73
US10461156B2Oct 29, 2019
LDMOS transistor and method of forming the LDMOS transistor with improved RDS*CGD
TEXAS INSTRUMENTS INC1 citations73
US9660074B2May 23, 2017
Methods and apparatus for LDMOS devices with cascaded RESURF implants and double buffers
TEXAS INSTRUMENTS INC5 citations73
GEN ELECTRIC
2 patentsSEAGATE TECHNOLOGY LLC
2 patentsINST OF MICROELECTRONICS
2 patentsUNIV CHINA PETROLEUM BEIJING
2 patentsUS11136488B1Oct 5, 2021
Biodiesel-based constant rheological property drilling fluid containing intelligent temperature responsive polymer
UNIV CHINA PETROLEUM BEIJING3 citations71
US11326450B2May 10, 2022
Intelligent prediction method and apparatus for reservoir sensitivity
UNIV CHINA PETROLEUM BEIJING2 citations70
HADLEY MARK ALLAN
1 patentTAIWAN SEMICONDUCTOR MFG CO LTD
1 patentNG CHUN-WAI
1 patentAKROS SILICON INC
1 patentPYZIK ALEKSANDER J
1 patentFINNERTY CAINE
1 patentShowing the top 50 of 142 patents by PatentIndex Score.