Inventor
CHEN DE-FANG
TW58 patents
⚠️ This page may combine multiple inventors who share the name “CHEN DE-FANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
44 patentsUS10665457B2May 26, 2020
Method of forming an integrated circuit using a patterned mask layer
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations84
US10505014B2Dec 10, 2019
Vertical device having a protrusion source
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US9934971B2Apr 3, 2018
Method of forming an integrated circuit using a patterned mask layer
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US9853102B2Dec 26, 2017
Tunnel field-effect transistor
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US9640398B2May 2, 2017
Method of forming an integrated circuit using a patterned mask layer
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US9633907B2Apr 25, 2017
Self-aligned nanowire formation using double patterning
TAIWAN SEMICONDUCTOR MFG CO LTD10 citations84
US9412614B2Aug 9, 2016
Nano wire structure and method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US11916131B2Feb 27, 2024
Vertical device having a protrusion source
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11462408B2Oct 4, 2022
Method of forming an integrated circuit using a patterned mask layer
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10879129B2Dec 29, 2020
Self-aligned nanowire formation using double patterning
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10854728B2Dec 1, 2020
Vertical device having a protrusion structure
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10714357B2Jul 14, 2020
Methods for improved critical dimension uniformity in a semiconductor device fabrication process
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10026658B2Jul 17, 2018
Methods for fabricating vertical-gate-all-around transistor structures
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9991132B2Jun 5, 2018
Lithographic technique incorporating varied pattern materials
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US9966448B2May 8, 2018
Method of making a silicide beneath a vertical structure
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9805968B2Oct 31, 2017
Vertical structure having an etch stop over portion of the source
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9590090B2Mar 7, 2017
Method of forming channel of gate structure
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9570358B2Feb 14, 2017
Nano wire structure and method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9478631B2Oct 25, 2016
Vertical-gate-all-around devices and method of fabrication thereof
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US9472414B2Oct 18, 2016
Self-aligned multiple spacer patterning process
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US12349435B2Jul 1, 2025
Vertical device having a protrusion source
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US10163723B2Dec 25, 2018
Self-aligned nanowire formation using double patterning
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US9741621B2Aug 22, 2017
Nano wire structure and method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US12027370B2Jul 2, 2024
Method of forming an integrated circuit using a patterned mask layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11901188B2Feb 13, 2024
Method for improved critical dimension uniformity in a semiconductor device fabrication process
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11855167B2Dec 26, 2023
Structure and formation method of semiconductor device with nanosheet structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11289338B2Mar 29, 2022
Method for improved critical dimension uniformity in a semiconductor device fabrication process
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11227788B2Jan 18, 2022
Method of forming isolation layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11056486B2Jul 6, 2021
Semiconductor device with multiple threshold voltage and method of fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12283596B2Apr 22, 2025
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11742353B2Aug 29, 2023
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12520526B2Jan 6, 2026
Semiconductor devices with modified source/drain feature and methods thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US12080800B2Sep 3, 2024
Semiconductor devices with modified source/drain feature and methods thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US10707114B2Jul 7, 2020
Method of forming isolation layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10504792B2Dec 10, 2019
Self-aligned nanowire formation using double patterning
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10418271B2Sep 17, 2019
Method of forming isolation layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10325994B2Jun 18, 2019
Semiconductor device and method of forming vertical structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10312109B2Jun 4, 2019
Lithographic technique incorporating varied pattern materials
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10276725B2Apr 30, 2019
Gate structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10276562B2Apr 30, 2019
Semiconductor device with multiple threshold voltage and method of fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10032639B2Jul 24, 2018
Methods for improved critical dimension uniformity in a semiconductor device fabrication process
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9954069B2Apr 24, 2018
Semiconductor device and method of forming vertical structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9941394B2Apr 10, 2018
Tunnel field-effect transistor
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations52
US9911661B2Mar 6, 2018
Nano wire structure and method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
TAIWAN SEMICONDUCTOR MFG
5 patentsUS9224833B2Dec 29, 2015
Method of forming a vertical device
TAIWAN SEMICONDUCTOR MFG33 citations98
US7759239B1Jul 20, 2010
Method of reducing a critical dimension of a semiconductor device
TAIWAN SEMICONDUCTOR MFG36 citations91
US9318447B2Apr 19, 2016
Semiconductor device and method of forming vertical structure
TAIWAN SEMICONDUCTOR MFG6 citations84
US9059085B2Jun 16, 2015
Method of forming an integrated circuit using a patterned mask layer
TAIWAN SEMICONDUCTOR MFG4 citations83
US9176388B2Nov 3, 2015
Multi-line width pattern created using photolithography
TAIWAN SEMICONDUCTOR MFG2 citations62
HSIEH TZU-YEN
1 patentShowing the top 50 of 58 patents by PatentIndex Score.