Inventor
NAKAOKA HIROAKI
JP25 patents
⚠️ This page may combine multiple inventors who share the name “NAKAOKA HIROAKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD
24 patentsUS5696008ADec 9, 1997
Semiconductor device and method of manufacturing the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD44 citations96
US6800512B1Oct 5, 2004
Method of forming insulating film and method of fabricating semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD26 citations92
US6770517B2Aug 3, 2004
Semiconductor device and method for fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD20 citations92
US6337500B1Jan 8, 2002
Semiconductor device and method for fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD35 citations92
US6217951B1Apr 17, 2001
Impurity introduction method and apparatus thereof and method of manufacturing semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD26 citations92
US5851906ADec 22, 1998
Impurity doping method
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD21 citations92
US5428244AJun 27, 1995
Semiconductor device having a silicon rich dielectric layer
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD36 citations92
US7067382B2Jun 27, 2006
Semiconductor device and method for fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD12 citations83
US5780898AJul 14, 1998
Semiconductor device with a vertical field effect transistor and method of manufacturing the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD14 citations82
US5670810ASep 23, 1997
Semiconductor device with a vertical field effect transistor
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD14 citations82
US7033874B2Apr 25, 2006
Method of forming insulating film and method of fabricating semiconductor device including plasma bias for forming a second insulating film
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD6 citations74
US6831020B2Dec 14, 2004
Method for fabricating semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD7 citations74
US7015554B2Mar 21, 2006
Semiconductor device and method for fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD8 citations73
US6995415B2Feb 7, 2006
Semiconductor device and its manufacturing method
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD10 citations73
US5726071AMar 10, 1998
Manufacturing method of CMOS transistor
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD5 citations73
US5686340ANov 11, 1997
Manufacturing method of CMOS transistor
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD7 citations73
US5618748AApr 8, 1997
Manufacturing method of CMOS transistor with no reduction of punch-through voltage
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD3 citations73
US5447872ASep 5, 1995
Manufacturing method of CMOS transistor including heat treatments of gate electrodes and LDD regions at reducing temperatures
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD7 citations73
US5409847AApr 25, 1995
Manufacturing method of CMOS transistor in which heat treatment at higher temperature is done prior to heat treatment at low temperature
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD5 citations73
US6861375B1Mar 1, 2005
Method of fabricating semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD7 citations68
US6884643B2Apr 26, 2005
Semiconductor device, method for evaluating the same, and method for fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD4 citations62
US6859023B2Feb 22, 2005
Evaluation method for evaluating insulating film, evaluation device therefor and method for manufacturing evaluation device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD5 citations62
US6784080B2Aug 31, 2004
Method of manufacturing semiconductor device by sputter doping
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD5 citations62
US5756382AMay 26, 1998
Manufacturing method of CMOS transistor
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD0 citations52