Inventor
PAGETTE FRANCOIS
US29 patents
⚠️ This page may combine multiple inventors who share the name “PAGETTE FRANCOIS”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
26 patentsUS7002221B2Feb 21, 2006
Bipolar transistor having raised extrinsic base with selectable self-alignment and methods of forming same
IBM17 citations93
US7087940B2Aug 8, 2006
Structure and method of forming bipolar transistor having a self-aligned raised extrinsic base using self-aligned etch stop layer
IBM31 citations92
US6861186B1Mar 1, 2005
Method for backside alignment of photo-processes using standard front side alignment tools
IBM28 citations92
US7960096B2Jun 14, 2011
Sublithographic patterning method incorporating a self-aligned single mask process
IBM8 citations84
US7679164B2Mar 16, 2010
Bipolar transistor with silicided sub-collector
IBM9 citations84
US7622357B2Nov 24, 2009
Semiconductor device structures with backside contacts for improved heat dissipation and reduced parasitic resistance
IBM13 citations84
US7253096B2Aug 7, 2007
Bipolar transistor having raised extrinsic base with selectable self-alignment and methods of forming same
IBM11 citations84
US7217988B2May 15, 2007
Bipolar transistor with isolation and direct contacts
IBM10 citations84
US7180157B2Feb 20, 2007
Bipolar transistor with a very narrow emitter feature
IBM12 citations84
US6960820B2Nov 1, 2005
Bipolar transistor self-alignment with raised extrinsic base extension and methods of forming same
IBM14 citations84
US6858485B2Feb 22, 2005
Method for creation of a very narrow emitter feature
IBM8 citations74
US8003473B2Aug 23, 2011
Bipolar transistor with silicided sub-collector
IBM5 citations73
US7952165B2May 31, 2011
Heterojunction bipolar transistor (HBT) with self-aligned sub-lithographic metal-semiconductor alloy base contacts
IBM3 citations63
US7732292B2Jun 8, 2010
Bipolar transistor with self-aligned retrograde extrinsic base implant profile and self-aligned silicide
IBM3 citations63
US7611954B2Nov 3, 2009
Bipolar transistor self-alignment with raised extrinsic base extension and methods of forming same
IBM3 citations63
US7566921B2Jul 28, 2009
Silicon germanium emitter
IBM2 citations63
US7390720B2Jun 24, 2008
Local collector implant structure for heterojunction bipolar transistors and method of forming the same
IBM3 citations63
US7294869B2Nov 13, 2007
Silicon germanium emitter
IBM4 citations63
US7288829B2Oct 30, 2007
Bipolar transistor with self-aligned retrograde extrinsic base implant profile and self-aligned silicide
IBM3 citations63
US7611953B2Nov 3, 2009
Bipolar transistor with isolation and direct contacts
IBM5 citations62
US8981430B2Mar 17, 2015
Bipolar transistor with low resistance base contact and method of making the same
IBM0 citations52
US7585740B2Sep 8, 2009
Fully silicided extrinsic base transistor
IBM0 citations52
US7473610B2Jan 6, 2009
Local collector implant structure for heterojunction bipolar transistors and method of forming the same
IBM0 citations52
US7388237B2Jun 17, 2008
Local collector implant structure for heterojunction bipolar transistors
IBM0 citations52
US7394113B2Jul 1, 2008
Self-alignment scheme for a heterojunction bipolar transistor
IBM0 citations51
US8357953B2Jan 22, 2013
Bipolar transistor with low resistance base contact
IBM0 citations50