P

Inventor

PAGETTE FRANCOIS

US29 patents
⚠️ This page may combine multiple inventors who share the name “PAGETTE FRANCOIS”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

IBM

26 patents
US7002221B2Feb 21, 2006

Bipolar transistor having raised extrinsic base with selectable self-alignment and methods of forming same

IBM17 citations93
US7087940B2Aug 8, 2006

Structure and method of forming bipolar transistor having a self-aligned raised extrinsic base using self-aligned etch stop layer

IBM31 citations92
US6861186B1Mar 1, 2005

Method for backside alignment of photo-processes using standard front side alignment tools

IBM28 citations92
US7960096B2Jun 14, 2011

Sublithographic patterning method incorporating a self-aligned single mask process

IBM8 citations84
US7679164B2Mar 16, 2010

Bipolar transistor with silicided sub-collector

IBM9 citations84
US7622357B2Nov 24, 2009

Semiconductor device structures with backside contacts for improved heat dissipation and reduced parasitic resistance

IBM13 citations84
US7253096B2Aug 7, 2007

Bipolar transistor having raised extrinsic base with selectable self-alignment and methods of forming same

IBM11 citations84
US7217988B2May 15, 2007

Bipolar transistor with isolation and direct contacts

IBM10 citations84
US7180157B2Feb 20, 2007

Bipolar transistor with a very narrow emitter feature

IBM12 citations84
US6960820B2Nov 1, 2005

Bipolar transistor self-alignment with raised extrinsic base extension and methods of forming same

IBM14 citations84
US6858485B2Feb 22, 2005

Method for creation of a very narrow emitter feature

IBM8 citations74
US8003473B2Aug 23, 2011

Bipolar transistor with silicided sub-collector

IBM5 citations73
US7952165B2May 31, 2011

Heterojunction bipolar transistor (HBT) with self-aligned sub-lithographic metal-semiconductor alloy base contacts

IBM3 citations63
US7732292B2Jun 8, 2010

Bipolar transistor with self-aligned retrograde extrinsic base implant profile and self-aligned silicide

IBM3 citations63
US7611954B2Nov 3, 2009

Bipolar transistor self-alignment with raised extrinsic base extension and methods of forming same

IBM3 citations63
US7566921B2Jul 28, 2009

Silicon germanium emitter

IBM2 citations63
US7390720B2Jun 24, 2008

Local collector implant structure for heterojunction bipolar transistors and method of forming the same

IBM3 citations63
US7294869B2Nov 13, 2007

Silicon germanium emitter

IBM4 citations63
US7288829B2Oct 30, 2007

Bipolar transistor with self-aligned retrograde extrinsic base implant profile and self-aligned silicide

IBM3 citations63
US7611953B2Nov 3, 2009

Bipolar transistor with isolation and direct contacts

IBM5 citations62
US8981430B2Mar 17, 2015

Bipolar transistor with low resistance base contact and method of making the same

IBM0 citations52
US7585740B2Sep 8, 2009

Fully silicided extrinsic base transistor

IBM0 citations52
US7473610B2Jan 6, 2009

Local collector implant structure for heterojunction bipolar transistors and method of forming the same

IBM0 citations52
US7388237B2Jun 17, 2008

Local collector implant structure for heterojunction bipolar transistors

IBM0 citations52
US7394113B2Jul 1, 2008

Self-alignment scheme for a heterojunction bipolar transistor

IBM0 citations51
US8357953B2Jan 22, 2013

Bipolar transistor with low resistance base contact

IBM0 citations50

LAVOIE CHRISTIAN

2 patents

CHU JACK O

1 patent