Inventor
CHANG YI-FENG
TW52 patents
⚠️ This page may combine multiple inventors who share the name “CHANG YI-FENG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
25 patentsUS10643988B2May 5, 2020
Intelligent diode structures
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US11908859B2Feb 20, 2024
Semiconductor device including transistors sharing gates with structures having reduced parasitic circuit
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11282830B2Mar 22, 2022
High voltage ESD protection apparatus
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10411005B2Sep 10, 2019
Intelligent diode structures
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10366992B2Jul 30, 2019
Semiconductor device including transistors sharing gates
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9887275B2Feb 6, 2018
Method of reducing the heights of source-drain sidewall spacers of FinFETs through etching
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US9548367B2Jan 17, 2017
Method of reducing the heights of source-drain sidewall spacers of FinFETs through etching and the FinFETs thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11416666B1Aug 16, 2022
Integrated circuit and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US12512422B2Dec 30, 2025
Semiconductor devices having an electro-static discharge protection structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12396256B2Aug 19, 2025
Semiconductor device including transistors sharing gates with structures having reduced parasitic circuit
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11855088B2Dec 26, 2023
Semiconductor device including transistors sharing gates with structures having reduced parasitic circuit
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11848286B2Dec 19, 2023
Semiconductor devices having an electro-static discharge protection structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11775726B2Oct 3, 2023
Integrated circuit having latch-up immunity
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11688701B2Jun 27, 2023
Semiconductor devices having an electro-static discharge protection structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11688702B2Jun 27, 2023
Semiconductor devices having an electro-static discharge protection structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11222893B2Jan 11, 2022
Semiconductor device including transistors sharing gates with structures having reduced parasitic circuit
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10930640B2Feb 23, 2021
Intelligent diode structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10867987B2Dec 15, 2020
Integrated circuit device having ESD protection
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12349470B2Jul 1, 2025
Semiconductor device having multiple electrostatic discharge (ESD) paths
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10734330B2Aug 4, 2020
Semiconductor devices having an electro-static discharge protection structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10163891B2Dec 25, 2018
High voltage ESD protection apparatus
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9978739B2May 22, 2018
Semiconductor arrangement facilitating enhanced thermo-conduction
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9666575B2May 30, 2017
Semiconductor arrangement facilitating enhanced thermo-conduction
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9601627B2Mar 21, 2017
Diode structure compatible with FinFET process
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9129809B2Sep 8, 2015
Silicon controlled rectifier for high voltage applications
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations42
TAIWAN SEMICONDUCTOR MFG
9 patentsUS9209302B2Dec 8, 2015
Method of reducing the heights of source-drain sidewall spacers of FinFETs through etching
TAIWAN SEMICONDUCTOR MFG5 citations84
US8809961B2Aug 19, 2014
Electrostatic discharge (ESD) guard ring protective structure
TAIWAN SEMICONDUCTOR MFG7 citations84
US9368629B2Jun 14, 2016
Diode structure compatible with FinFET process
TAIWAN SEMICONDUCTOR MFG2 citations63
US9093492B2Jul 28, 2015
Diode structure compatible with FinFET process
TAIWAN SEMICONDUCTOR MFG2 citations63
US9064720B2Jun 23, 2015
Decoupling capacitor for FinFET compatible process
TAIWAN SEMICONDUCTOR MFG3 citations63
US8823139B2Sep 2, 2014
Low leakage diodes
TAIWAN SEMICONDUCTOR MFG2 citations63
US9224727B2Dec 29, 2015
ESD protection apparatus
TAIWAN SEMICONDUCTOR MFG0 citations52
US9230961B2Jan 5, 2016
Semiconductor arrangement facilitating enhanced thermo-conduction
TAIWAN SEMICONDUCTOR MFG0 citations47
US9209265B2Dec 8, 2015
ESD devices comprising semiconductor fins
TAIWAN SEMICONDUCTOR MFG0 citations42
SILICONWARE PRECISION INDUSTRIES CO LTD
5 patentsUS9589841B2Mar 7, 2017
Electronic package and fabrication method thereof
SILICONWARE PRECISION INDUSTRIES CO LTD6 citations72
US9754927B2Sep 5, 2017
Method for fabricating multi-chip stack structure
SILICONWARE PRECISION INDUSTRIES CO LTD1 citations51
US10396021B2Aug 27, 2019
Fabrication method of layer structure for mounting semiconductor device
SILICONWARE PRECISION INDUSTRIES CO LTD0 citations49
US9972564B2May 15, 2018
Layer structure for mounting semiconductor device and fabrication method thereof
SILICONWARE PRECISION INDUSTRIES CO LTD0 citations49
US7339199B2Mar 4, 2008
Semiconductor package including light emitter and IC
SILICONWARE PRECISION INDUSTRIES CO LTD1 citations46
LEE JAM-WEM
4 patentsCHANG YI-FENG
2 patentsHUANG YUN-PEI
1 patentTSAI TSUNG-CHE
1 patentLIU CHUNG-LUN
1 patentNANYA TECHNOLOGY CORP
1 patentCHICONY ELECTRONICS CO LTD
1 patentShowing the top 50 of 52 patents by PatentIndex Score.