P

Inventor

PATLOLLA RAGHUVEER R

US38 patents
⚠️ This page may combine multiple inventors who share the name “PATLOLLA RAGHUVEER R”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

IBM

33 patents
US9685406B1Jun 20, 2017

Selective and non-selective barrier layer wet removal

IBM34 citations94
US10204829B1Feb 12, 2019

Low-resistivity metallic interconnect structures with self-forming diffusion barrier layers

IBM21 citations93
US9859218B1Jan 2, 2018

Selective surface modification of interconnect structures

IBM16 citations92
US10096769B2Oct 9, 2018

Bottom electrode for MRAM applications

IBM7 citations84
US10002831B2Jun 19, 2018

Selective and non-selective barrier layer wet removal

IBM7 citations84
US9806023B1Oct 31, 2017

Selective and non-selective barrier layer wet removal

IBM8 citations84
US9190285B1Nov 17, 2015

Rework and stripping of complex patterning layers using chemical mechanical polishing

IBM11 citations82
US11018087B2May 25, 2021

Metal interconnects

IBM2 citations73
US10910307B2Feb 2, 2021

Back end of line metallization structure

IBM3 citations73
US10903161B2Jan 26, 2021

Back end of line metallization structure

IBM3 citations73
US10741748B2Aug 11, 2020

Back end of line metallization structures

IBM2 citations73
US10699945B2Jun 30, 2020

Back end of line integration for interconnects

IBM5 citations73
US10461248B2Oct 29, 2019

Bottom electrode for MRAM applications

IBM2 citations73
US10211153B2Feb 19, 2019

Low aspect ratio interconnect

IBM2 citations73
US9881833B1Jan 30, 2018

Barrier planarization for interconnect metallization

IBM6 citations73
US9837350B2Dec 5, 2017

Semiconductor interconnect structure with double conductors

IBM3 citations73
US9666529B2May 30, 2017

Method and structure to reduce the electric field in semiconductor wiring interconnects

IBM4 citations73
US10559530B2Feb 11, 2020

Forming dual metallization interconnect structures in single metallization level

IBM4 citations71
US10832917B2Nov 10, 2020

Low oxygen cleaning for CMP equipment

IBM3 citations68
US11205587B2Dec 21, 2021

Liner and cap structures for reducing local interconnect vertical resistance without compromising reliability

IBM0 citations62
US11094527B2Aug 17, 2021

Wet clean solutions to prevent pattern collapse

IBM0 citations62
US11031250B2Jun 8, 2021

Semiconductor structures of more uniform thickness

IBM1 citations62
US11031339B2Jun 8, 2021

Metal interconnects

IBM0 citations62
US10686126B2Jun 16, 2020

Back end of line metallization structures

IBM1 citations62
US10373867B2Aug 6, 2019

Cobalt contact and interconnect structures

IBM1 citations62
US10177030B2Jan 8, 2019

Cobalt contact and interconnect structures

IBM1 citations62
US11037875B2Jun 15, 2021

Forming dual metallization interconnect structures in single metallization level

IBM0 citations61
US11031337B2Jun 8, 2021

Forming dual metallization interconnect structures in single metallization level

IBM1 citations61
US10685876B2Jun 16, 2020

Liner and cap structures for reducing local interconnect vertical resistance without compromising reliability

IBM0 citations52
US10373909B2Aug 6, 2019

Selective surface modification of interconnect structures

IBM0 citations52
US10242872B2Mar 26, 2019

Rework of patterned dielectric and metal hardmask films

IBM0 citations52
US9934980B2Apr 3, 2018

Rework and stripping of complex patterning layers using chemical mechanical polishing

IBM0 citations50
US11804378B2Oct 31, 2023

Surface conversion in chemical mechanical polishing

IBM0 citations49

TESSERA INC

2 patents

GLOBALFOUNDRIES INC

1 patent

HUANG ELBERT EMIN

1 patent

TESSERA LLC

1 patent