Inventor
JANG LINUS
US19 patents
⚠️ This page may combine multiple inventors who share the name “JANG LINUS”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
GLOBALFOUNDRIES INC
11 patentsUS9209038B2Dec 8, 2015
Methods for fabricating integrated circuits using self-aligned quadruple patterning
GLOBALFOUNDRIES INC34 citations91
US9214360B2Dec 15, 2015
Methods of patterning features having differing widths
GLOBALFOUNDRIES INC6 citations84
US9595478B2Mar 14, 2017
Dummy gate used as interconnection and method of making the same
GLOBALFOUNDRIES INC6 citations82
US9184263B2Nov 10, 2015
Methods of forming gate structures for semiconductor devices using a replacement gate technique and the resulting devices
GLOBALFOUNDRIES INC7 citations81
US9209037B2Dec 8, 2015
Methods for fabricating integrated circuits including selectively forming and removing fin structures
GLOBALFOUNDRIES INC5 citations71
US10181420B2Jan 15, 2019
Devices with chamfer-less vias multi-patterning and methods for forming chamfer-less vias
GLOBALFOUNDRIES INC2 citations68
US9449835B2Sep 20, 2016
Methods of forming features having differing pitch spacing and critical dimensions
GLOBALFOUNDRIES INC2 citations62
US9466505B2Oct 11, 2016
Methods of patterning features having differing widths
GLOBALFOUNDRIES INC0 citations52
US9431264B2Aug 30, 2016
Methods of forming integrated circuits and multiple critical dimension self-aligned double patterning processes
GLOBALFOUNDRIES INC1 citations51
US8716094B1May 6, 2014
FinFET formation using double patterning memorization
GLOBALFOUNDRIES INC1 citations51
US10283505B2May 7, 2019
Dummy gate used as interconnection and method of making the same
GLOBALFOUNDRIES INC0 citations50
IBM
5 patentsUS10297510B1May 21, 2019
Sidewall image transfer process for multiple gate width patterning
IBM3 citations73
US9653571B2May 16, 2017
Freestanding spacer having sub-lithographic lateral dimension and method of forming same
IBM2 citations72
US9842741B2Dec 12, 2017
Removal of semiconductor growth defects
IBM0 citations52
US9496257B2Nov 15, 2016
Removal of semiconductor growth defects
IBM0 citations52
US9653573B2May 16, 2017
Replacement metal gate including dielectric gate material
IBM0 citations42