Inventor
HENSON TIMOTHY D
US20 patents
⚠️ This page may combine multiple inventors who share the name “HENSON TIMOTHY D”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AMERICAS CORP
10 patentsUS9673318B1Jun 6, 2017
Semiconductor device including a gate trench having a gate electrode located above a buried electrode
INFINEON TECHNOLOGIES AMERICAS CORP19 citations91
US9620583B2Apr 11, 2017
Power semiconductor device with source trench and termination trench implants
INFINEON TECHNOLOGIES AMERICAS CORP13 citations82
US9761676B2Sep 12, 2017
Power semiconductor device with embedded field electrodes
INFINEON TECHNOLOGIES AMERICAS CORP2 citations72
US9590096B2Mar 7, 2017
Vertical FET having reduced on-resistance
INFINEON TECHNOLOGIES AMERICAS CORP2 citations72
US9627328B2Apr 18, 2017
Semiconductor structure having integrated snubber resistance
INFINEON TECHNOLOGIES AMERICAS CORP2 citations71
US10483359B2Nov 19, 2019
Method of fabricating a power semiconductor device
INFINEON TECHNOLOGIES AMERICAS CORP0 citations51
US9735241B2Aug 15, 2017
Semiconductor device with a field plate double trench having a thick bottom dielectric
INFINEON TECHNOLOGIES AMERICAS CORP0 citations51
US9966464B2May 8, 2018
Method of forming a semiconductor structure having integrated snubber resistance
INFINEON TECHNOLOGIES AMERICAS CORP0 citations50
US9991377B2Jun 5, 2018
Trench FET with ruggedness enhancement regions
INFINEON TECHNOLOGIES AMERICAS CORP0 citations41
US9818743B2Nov 14, 2017
Power semiconductor device with contiguous gate trenches and offset source trenches
INFINEON TECHNOLOGIES AMERICAS CORP0 citations40
INT RECTIFIER CORP
6 patentsUS7161208B2Jan 9, 2007
Trench mosfet with field relief feature
INT RECTIFIER CORP30 citations92
US9202882B2Dec 1, 2015
Semiconductor device with a thick bottom field plate trench having a single dielectric and angled sidewalls
INT RECTIFIER CORP4 citations83
US7482654B2Jan 27, 2009
MOSgated power semiconductor device with source field electrode
INT RECTIFIER CORP13 citations83
US7554153B2Jun 30, 2009
Power semiconductor device
INT RECTIFIER CORP4 citations62
US9299793B2Mar 29, 2016
Semiconductor device with a field plate trench having a thick bottom dielectric
INT RECTIFIER CORP1 citations61
US9006824B2Apr 14, 2015
Power semiconductor device with reduced on-resistance and increased breakdown voltage
INT RECTIFIER CORP0 citations51