Inventor
RANJAN NIRAJ
US24 patents
⚠️ This page may combine multiple inventors who share the name “RANJAN NIRAJ”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INT RECTIFIER CORP
14 patentsUS6707101B2Mar 16, 2004
Integrated series schottky and FET to allow negative drain voltage
INT RECTIFIER CORP23 citations92
US6529034B1Mar 4, 2003
Integrated series schottky and FET to allow negative drain voltage
INT RECTIFIER CORP28 citations92
US5861657AJan 19, 1999
Graded concentration epitaxial substrate for semiconductor device having resurf diffusion
INT RECTIFIER CORP27 citations92
US5801418ASep 1, 1998
High voltage power integrated circuit with level shift operation and without metal crossover
INT RECTIFIER CORP55 citations92
US5801431ASep 1, 1998
MOS gated semiconductor device with source metal covering the active gate
INT RECTIFIER CORP28 citations92
US6380004B2Apr 30, 2002
Process for manufacturing radhard power integrated circuit
INT RECTIFIER CORP53 citations91
US9299819B2Mar 29, 2016
Deep gate trench IGBT
INT RECTIFIER CORP4 citations84
US9245985B2Jan 26, 2016
IGBT with buried emitter electrode
INT RECTIFIER CORP5 citations84
US7183626B2Feb 27, 2007
Passivation structure with voltage equalizing loops
INT RECTIFIER CORP10 citations84
US5686754ANov 11, 1997
Polysilicon field ring structure for power IC
INT RECTIFIER CORP20 citations81
US8878591B2Nov 4, 2014
Level shifter utilizing bidirectional signaling through a capacitive isolation barrier
INT RECTIFIER CORP4 citations73
US5798538AAug 25, 1998
IGBT with integrated control
INT RECTIFIER CORP14 citations73
US8988128B2Mar 24, 2015
Level shifter having feedback signal from high voltage circuit
INT RECTIFIER CORP2 citations63
US9257983B2Feb 9, 2016
Level shifter utilizing a capacitive isolation barrier
INT RECTIFIER CORP0 citations52
INFINEON TECHNOLOGIES AMERICAS CORP
6 patentsUS9859407B2Jan 2, 2018
IGBT having deep gate trench
INFINEON TECHNOLOGIES AMERICAS CORP3 citations73
US9590096B2Mar 7, 2017
Vertical FET having reduced on-resistance
INFINEON TECHNOLOGIES AMERICAS CORP2 citations72
US9496378B2Nov 15, 2016
IGBT with buried emitter electrode
INFINEON TECHNOLOGIES AMERICAS CORP2 citations63
US9991377B2Jun 5, 2018
Trench FET with ruggedness enhancement regions
INFINEON TECHNOLOGIES AMERICAS CORP0 citations41
US9818743B2Nov 14, 2017
Power semiconductor device with contiguous gate trenches and offset source trenches
INFINEON TECHNOLOGIES AMERICAS CORP0 citations40
US10879230B2Dec 29, 2020
Schottky integrated high voltage terminations and related HVIC applications
INFINEON TECHNOLOGIES AMERICAS CORP0 citations39