Inventor
JUNG JUNG WHAN
KR10 patents
Patents
10 patentsUS9287367B2Mar 15, 2016
Semiconductor device and method of manufacturing the same
SEOUL VIOSYS CO LTD8 citations79
US10109767B2Oct 23, 2018
Method of growing n-type nitride semiconductor, light emitting diode and method of fabricating the same
SEOUL VIOSYS CO LTD2 citations70
US10361339B2Jul 23, 2019
Light emitting device and manufacturing method therefor
SEOUL VIOSYS CO LTD2 citations68
US9076896B2Jul 7, 2015
Method of fabricating nonpolar gallium nitride-based semiconductor layer, nonpolar semiconductor device, and method of fabricating the same
SEOUL VIOSYS CO LTD2 citations61
US9966497B2May 8, 2018
Method of fabricating nonpolar gallium nitride-based semiconductor layer, nonpolar semiconductor device, and method of fabricating the same
SEOUL VIOSYS CO LTD0 citations51
US9853182B2Dec 26, 2017
Gallium nitride-based light emitting diode
SEOUL VIOSYS CO LTD1 citations51
US9728404B2Aug 8, 2017
Method of growing nitride semiconductor layer, nitride semiconductor device, and method of fabricating the same
SEOUL VIOSYS CO LTD0 citations50
US9142622B2Sep 22, 2015
Method of growing nitride semiconductor layer, nitride semiconductor device, and method of fabricating the same
SEOUL VIOSYS CO LTD0 citations50
US9449815B2Sep 20, 2016
Method of growing gallium nitride based semiconductor layers and method of fabricating light emitting device therewith
SEOUL VIOSYS CO LTD0 citations39
US9799800B2Oct 24, 2017
Light emitting device and method of fabricating the same
SEOUL VIOSYS CO LTD0 citations38