P

Inventor

DEVARAJAN THAMARAI S

US14 patents

Patents

14 patents
US9754798B1Sep 5, 2017

Hybridization fin reveal for uniform fin reveal depth across different fin pitches

IBM17 citations92
US9691765B1Jun 27, 2017

Fin type field effect transistors with different pitches and substantially uniform fin reveal

IBM12 citations84
US9679780B1Jun 13, 2017

Polysilicon residue removal in nanosheet MOSFETs

IBM11 citations84
US11302797B2Apr 12, 2022

Approach to bottom dielectric isolation for vertical transport fin field effect transistors

IBM1 citations73
US10840354B2Nov 17, 2020

Approach to bottom dielectric isolation for vertical transport fin field effect transistors

IBM3 citations73
US10629702B2Apr 21, 2020

Approach to bottom dielectric isolation for vertical transport fin field effect transistors

IBM3 citations73
US10366928B2Jul 30, 2019

Hybridization fin reveal for uniform fin reveal depth across different fin pitches

IBM1 citations73
US10020229B2Jul 10, 2018

Fin type field effect transistors with different pitches and substantially uniform fin reveal

IBM2 citations73
US10896816B2Jan 19, 2021

Silicon residue removal in nanosheet transistors

IBM4 citations71
US10242882B2Mar 26, 2019

Cyclic etch process to remove dummy gate oxide layer for fin field effect transistor fabrication

IBM1 citations62
US10388571B2Aug 20, 2019

Fin type field effect transistors with different pitches and substantially uniform fin reveal

IBM0 citations52
US10163721B2Dec 25, 2018

Hybridization fin reveal for uniform fin reveal depth across different fin pitches

IBM0 citations52
US9997352B2Jun 12, 2018

Polysilicon residue removal in nanosheet MOSFETs

IBM1 citations52
US9935015B1Apr 3, 2018

Hybridization fin reveal for uniform fin reveal depth across different fin pitches

IBM0 citations52