Inventor
LIN CHUNG-AN
TW16 patents
⚠️ This page may combine multiple inventors who share the name “LIN CHUNG-AN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
DELL PRODUCTS LP
7 patentsUS10524369B2Dec 31, 2019
Information handling system universal monitor mount
DELL PRODUCTS LP12 citations83
US12487646B2Dec 2, 2025
Support device for an expansion card of an information handling system
DELL PRODUCTS LP0 citations60
US11340656B2May 24, 2022
Cradle for an information handling system
DELL PRODUCTS LP0 citations58
US11683896B2Jun 20, 2023
Bracket module for compliant and non-compliant arm and raiser components of an information handling system
DELL PRODUCTS LP0 citations50
US12057593B2Aug 6, 2024
Dual real time clock (RTC) battery holder and method of manufacture
DELL PRODUCTS LP0 citations47
US12356581B2Jul 8, 2025
System and method for a universal fan holder for a cooling fan for information handling systems
DELL PRODUCTS LP0 citations46
US11009920B1May 18, 2021
Adjustable hinge module for information handling systems
DELL PRODUCTS LP0 citations46
DISNEY ENTPR INC
5 patentsUS10049481B2Aug 14, 2018
Direct manipulation interpolation and ghost wedging for distributed node-based interactive workflows
DISNEY ENTPR INC0 citations51
US8345044B2Jan 1, 2013
Indirect binding with segmented thin layers to provide shape-preserving deformations in computer animation
DISNEY ENTPR INC0 citations43
US10204435B2Feb 12, 2019
Multi-granular rigs for distributed node-based interactive workflows
DISNEY ENTPR INC0 citations41
US9613456B2Apr 4, 2017
Enhanced dual quaternion skinning with scale non-compensating joints and support joints
DISNEY ENTPR INC0 citations41
US10319134B2Jun 11, 2019
Animation system for managing scene constraints for pose-based caching
DISNEY ENTPR INC0 citations35
TAIWAN SEMICONDUCTOR MFG
3 patentsUS5413940AMay 9, 1995
Process of treating SOG layer using end-point detector for outgassing
TAIWAN SEMICONDUCTOR MFG43 citations91
US5492868AFeb 20, 1996
Capped reflow process to avoid contact autodoping and supress tungsten silicide peeling
TAIWAN SEMICONDUCTOR MFG9 citations68
US6071831AJun 6, 2000
Method of reducing spiral defects by adding an isopropyl alcohol rinse step before depositing sog
TAIWAN SEMICONDUCTOR MFG2 citations58