Inventor
KIM JAE HAK
KR39 patents
⚠️ This page may combine multiple inventors who share the name “KIM JAE HAK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
21 patentsUS9353984B2May 31, 2016
Refrigerator having double doors
SAMSUNG ELECTRONICS CO LTD56 citations97
US7183195B2Feb 27, 2007
Method of fabricating dual damascene interconnections of microelectronic device using hybrid low k-dielectric and carbon-free inorganic filler
SAMSUNG ELECTRONICS CO LTD24 citations92
US6861347B2Mar 1, 2005
Method for forming metal wiring layer of semiconductor device
SAMSUNG ELECTRONICS CO LTD31 citations92
US6828229B2Dec 7, 2004
Method of manufacturing interconnection line in semiconductor device
SAMSUNG ELECTRONICS CO LTD33 citations92
US6432843B1Aug 13, 2002
Methods of manufacturing integrated circuit devices in which a spin on glass insulation layer is dissolved so as to recess the spin on glass insulation layer from the upper surface of a pattern
SAMSUNG ELECTRONICS CO LTD26 citations92
US6855629B2Feb 15, 2005
Method for forming a dual damascene wiring pattern in a semiconductor device
SAMSUNG ELECTRONICS CO LTD12 citations84
US6815331B2Nov 9, 2004
Method for forming metal wiring layer of semiconductor device
SAMSUNG ELECTRONICS CO LTD20 citations84
US6849536B2Feb 1, 2005
Inter-metal dielectric patterns and method of forming the same
SAMSUNG ELECTRONICS CO LTD12 citations82
US7064059B2Jun 20, 2006
Method of forming dual damascene metal interconnection employing sacrificial metal oxide layer
SAMSUNG ELECTRONICS CO LTD12 citations81
US7488687B2Feb 10, 2009
Methods of forming electrical interconnect structures using polymer residues to increase etching selectivity through dielectric layers
SAMSUNG ELECTRONICS CO LTD7 citations73
US7022600B2Apr 4, 2006
Method of forming dual damascene interconnection using low-k dielectric material
SAMSUNG ELECTRONICS CO LTD10 citations72
US7323407B2Jan 29, 2008
Method of fabricating dual damascene interconnections of microelectronic device using diffusion barrier layer against base material
SAMSUNG ELECTRONICS CO LTD8 citations68
US7541276B2Jun 2, 2009
Methods for forming dual damascene wiring for semiconductor devices using protective via capping layer
SAMSUNG ELECTRONICS CO LTD6 citations63
US7041592B2May 9, 2006
Method for forming a metal interconnection layer of a semiconductor device using a modified dual damascene process
SAMSUNG ELECTRONICS CO LTD2 citations63
US6936533B2Aug 30, 2005
Method of fabricating semiconductor devices having low dielectric interlayer insulation layer
SAMSUNG ELECTRONICS CO LTD6 citations63
US7635645B2Dec 22, 2009
Method for forming interconnection line in semiconductor device and interconnection line structure
SAMSUNG ELECTRONICS CO LTD6 citations62
US7192864B2Mar 20, 2007
Method of forming interconnection lines for semiconductor device
SAMSUNG ELECTRONICS CO LTD5 citations62
US7687381B2Mar 30, 2010
Method of forming electrical interconnects within insulating layers that form consecutive sidewalls including forming a reaction layer on the inner sidewall
SAMSUNG ELECTRONICS CO LTD4 citations60
US7737029B2Jun 15, 2010
Methods of forming metal interconnect structures on semiconductor substrates using oxygen-removing plasmas and interconnect structures formed thereby
SAMSUNG ELECTRONICS CO LTD0 citations52
US7690557B2Apr 6, 2010
System and method for displaying received data using separate device
SAMSUNG ELECTRONICS CO LTD0 citations52
US7307014B2Dec 11, 2007
Method of forming a via contact structure using a dual damascene process
SAMSUNG ELECTRONICS CO LTD0 citations41
KOREA RES INST CHEM TECH
3 patentsUS7662810B2Feb 16, 2010
2-arylmethylazetidine carbapenem derivatives and preparation thereof
KOREA RES INST CHEM TECH2 citations60
US8053435B2Nov 8, 2011
Naphthalenyloxypropenyl derivatives having inhibitory activity against histone deacetylase and pharmaceutical composition comprising the same
KOREA RES INST CHEM TECH2 citations59
US5869477AFeb 9, 1999
β-methylcarbapenem derivatives, process for the preparation thereof and pharmaceutical composition comprising same
KOREA RES INST CHEM TECH1 citations48