Inventor
CHOI SUNG-YOOL
KR22 patents
⚠️ This page may combine multiple inventors who share the name “CHOI SUNG-YOOL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
KOREA ELECTRONICS TELECOMM
12 patentsUS6472802B1Oct 29, 2002
Triode-type field emission device having field emitter composed of emitter tips with diameter of nanometers and method for fabricating the same
KOREA ELECTRONICS TELECOMM60 citations94
US6605894B2Aug 12, 2003
Field emission devices using carbon nanotubes and method thereof
KOREA ELECTRONICS TELECOMM47 citations92
US6204608B1Mar 20, 2001
Field emission display device
KOREA ELECTRONICS TELECOMM29 citations92
US6648712B2Nov 18, 2003
Triode-type field emission device having field emitter composed of emitter tips with diameter of nanometers and method for fabricating the same
KOREA ELECTRONICS TELECOMM23 citations91
US7436033B2Oct 14, 2008
Tri-gated molecular field effect transistor and method of fabricating the same
KOREA ELECTRONICS TELECOMM12 citations84
US7138331B2Nov 21, 2006
Method for manufacturing nano-gap electrode device
KOREA ELECTRONICS TELECOMM10 citations73
US7960774B2Jun 14, 2011
Memory devices including dielectric thin film and method of manufacturing the same
KOREA ELECTRONICS TELECOMM4 citations62
US7537883B2May 26, 2009
Method of manufacturing nano size-gap electrode device
KOREA ELECTRONICS TELECOMM3 citations62
US7413973B2Aug 19, 2008
Method for manufacturing nano-gap electrode device
KOREA ELECTRONICS TELECOMM4 citations62
US8980721B2Mar 17, 2015
Resistive memory device and method of fabricating the same
KOREA ELECTRONICS TELECOMM1 citations51
US8344344B2Jan 1, 2013
Resistive memory device and method of fabricating the same
KOREA ELECTRONICS TELECOMM0 citations51
US6815567B2Nov 9, 2004
Derivatives of 4-sulfanylalkyl-3,5-dinitrobenzyl alcohol and method for preparing the same
KOREA ELECTRONICS TELECOMM0 citations51
KOREA ADVANCED INST SCI & TECH
4 patentsUS11024759B2Jun 1, 2021
Electronic device using two dimensional semiconductor material
KOREA ADVANCED INST SCI & TECH2 citations68
US10847577B2Nov 24, 2020
Memory and logic device-integrated soft electronic system
KOREA ADVANCED INST SCI & TECH3 citations66
US11552267B2Jan 10, 2023
Soft memristor for soft neuromorphic system
KOREA ADVANCED INST SCI & TECH0 citations58
US11268210B2Mar 8, 2022
Method for manufacturing transition metal chalcogenide and transition metal chalcogenide prepared thereby
KOREA ADVANCED INST SCI & TECH0 citations49
SK HYNIX INC
3 patentsUS12314841B2May 27, 2025
Memristor device, method of fabricating thereof, synaptic device including memristor device and neuromorphic device including synaptic device
SK HYNIX INC0 citations57
US11793006B2Oct 17, 2023
Memristor device, method of fabricating thereof, synaptic device including memristor device and neuromorphic device including synaptic device
SK HYNIX INC0 citations57
US12598855B2Apr 7, 2026
Memristor device, method of fabricating the same, synaptic device including the same, and neuromorphic device including the synaptic device
SK HYNIX INC0 citations55