Inventor
BORLAND JOHN O
US7 patents
⚠️ This page may combine multiple inventors who share the name “BORLAND JOHN O”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TEL EPION INC
3 patentsUS7259036B2Aug 21, 2007
Methods of forming doped and un-doped strained semiconductor materials and semiconductor films by gas-cluster-ion-beam irradiation and materials and film products
TEL EPION INC131 citations97
US7410890B2Aug 12, 2008
Formation of doped regions and/or ultra-shallow junctions in semiconductor materials by gas-cluster ion irradiation
TEL EPION INC28 citations91
US7396745B2Jul 8, 2008
Formation of ultra-shallow junctions by gas-cluster ion irradiation
TEL EPION INC12 citations83
GENUS INC
3 patentsUS5501993AMar 26, 1996
Method of constructing CMOS vertically modulated wells (VMW) by clustered MeV BILLI (buried implanted layer for lateral isolation) implantation
GENUS INC102 citations96
US5814866ASep 29, 1998
Semiconductor device having at least one field oxide area and CMOS vertically modulated wells (VMW) with a buried implanted layer for lateral isolation having a first portion below a well, a second portion forming another, adjacent well, and a vertical po
GENUS INC45 citations91
US5821589AOct 13, 1998
Method for cmos latch-up improvement by mev billi (buried implanted layer for laternal isolation) plus buried layer implantation
GENUS INC10 citations72