Inventor
SPIKES THOMAS E JR
US2 patents
Patents
2 patentsUS5963810AOct 5, 1999
Semiconductor device having nitrogen enhanced high permittivity gate insulating layer and fabrication thereof
ADVANCED MICRO DEVICES INC29 citations90
US5970350AOct 19, 1999
Semiconductor device having a thin gate oxide and method of manufacture thereof
ADVANCED MICRO DEVICES INC6 citations60