Inventor
CHANDRASHEKAR ANAND
US52 patents
⚠️ This page may combine multiple inventors who share the name “CHANDRASHEKAR ANAND”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
LAM RES CORP
26 patentsUS10170320B2Jan 1, 2019
Feature fill with multi-stage nucleation inhibition
LAM RES CORP20 citations94
US9997405B2Jun 12, 2018
Feature fill with nucleation inhibition
LAM RES CORP22 citations94
US9972504B2May 15, 2018
Atomic layer etching of tungsten for enhanced tungsten deposition fill
LAM RES CORP21 citations94
US9548228B2Jan 17, 2017
Void free tungsten fill in different sized features
LAM RES CORP23 citations94
US9082826B2Jul 14, 2015
Methods and apparatuses for void-free tungsten fill in three-dimensional semiconductor features
LAM RES CORP37 citations94
US9978610B2May 22, 2018
Pulsing RF power in etch process to enhance tungsten gapfill performance
LAM RES CORP19 citations93
US10760158B2Sep 1, 2020
Ex situ coating of chamber components for semiconductor processing
LAM RES CORP14 citations92
US10211099B2Feb 19, 2019
Chamber conditioning for remote plasma process
LAM RES CORP24 citations92
US10916434B2Feb 9, 2021
Feature fill with multi-stage nucleation inhibition
LAM RES CORP9 citations86
US10580654B2Mar 3, 2020
Feature fill with multi-stage nucleation inhibition
LAM RES CORP12 citations86
US10580695B2Mar 3, 2020
Feature fill with nucleation inhibition
LAM RES CORP13 citations86
US11069535B2Jul 20, 2021
Atomic layer etch of tungsten for enhanced tungsten deposition fill
LAM RES CORP7 citations84
US10566211B2Feb 18, 2020
Continuous and pulsed RF plasma for etching metals
LAM RES CORP15 citations84
US11365479B2Jun 21, 2022
Ex situ coating of chamber components for semiconductor processing
LAM RES CORP8 citations83
US10395944B2Aug 27, 2019
Pulsing RF power in etch process to enhance tungsten gapfill performance
LAM RES CORP9 citations83
US11978666B2May 7, 2024
Void free low stress fill
LAM RES CORP4 citations75
US11901227B2Feb 13, 2024
Feature fill with nucleation inhibition
LAM RES CORP3 citations75
US12261081B2Mar 25, 2025
Tungsten feature fill with inhibition control
LAM RES CORP2 citations73
US12227837B2Feb 18, 2025
Ex situ coating of chamber components for semiconductor processing
LAM RES CORP2 citations72
US10199267B2Feb 5, 2019
Tungsten nitride barrier layer deposition
LAM RES CORP2 citations71
US10977405B2Apr 13, 2021
Fill process optimization using feature scale modeling
LAM RES CORP3 citations70
US12448686B2Oct 21, 2025
Reducing line bending during metal fill process
LAM RES CORP0 citations62
US12173399B2Dec 24, 2024
Reducing line bending during metal fill process
LAM RES CORP1 citations62
US12476143B2Nov 18, 2025
Backside reactive inhibition gas
LAM RES CORP0 citations61
US12002679B2Jun 4, 2024
High step coverage tungsten deposition
LAM RES CORP1 citations61
US12163219B2Dec 10, 2024
Ex situ coating of chamber components for semiconductor processing
LAM RES CORP0 citations60
NOVELLUS SYSTEMS INC
14 patentsUS9653353B2May 16, 2017
Tungsten feature fill
NOVELLUS SYSTEMS INC50 citations98
US9240347B2Jan 19, 2016
Tungsten feature fill
NOVELLUS SYSTEMS INC72 citations98
US9236297B2Jan 12, 2016
Low tempature tungsten film deposition for small critical dimension contacts and interconnects
NOVELLUS SYSTEMS INC38 citations98
US10256142B2Apr 9, 2019
Tungsten feature fill with nucleation inhibition
NOVELLUS SYSTEMS INC25 citations94
US10103058B2Oct 16, 2018
Tungsten feature fill
NOVELLUS SYSTEMS INC23 citations94
US8835317B2Sep 16, 2014
Depositing tungsten into high aspect ratio features
NOVELLUS SYSTEMS INC33 citations94
US11075115B2Jul 27, 2021
Tungsten feature fill
NOVELLUS SYSTEMS INC11 citations86
US11437269B2Sep 6, 2022
Tungsten feature fill with nucleation inhibition
NOVELLUS SYSTEMS INC8 citations84
US11410883B2Aug 9, 2022
Tungsten feature fill with nucleation inhibition
NOVELLUS SYSTEMS INC5 citations84
US9673146B2Jun 6, 2017
Low temperature tungsten film deposition for small critical dimension contacts and interconnects
NOVELLUS SYSTEMS INC12 citations84
US9589835B2Mar 7, 2017
Method for forming tungsten film having low resistivity, low roughness and high reflectivity
NOVELLUS SYSTEMS INC8 citations84
US10381266B2Aug 13, 2019
Tungsten feature fill with nucleation inhibition
NOVELLUS SYSTEMS INC7 citations82
US12444651B2Oct 14, 2025
Tungsten feature fill with nucleation inhibition
NOVELLUS SYSTEMS INC0 citations62
US12387979B2Aug 12, 2025
Tungsten feature fill with nucleation inhibition
NOVELLUS SYSTEMS INC0 citations61
CHANDRASHEKAR ANAND
8 patentsUS8435894B2May 7, 2013
Depositing tungsten into high aspect ratio features
CHANDRASHEKAR ANAND314 citations99
US8153520B1Apr 10, 2012
Thinning tungsten layer after through silicon via filling
CHANDRASHEKAR ANAND218 citations99
US8124531B2Feb 28, 2012
Depositing tungsten into high aspect ratio features
CHANDRASHEKAR ANAND64 citations98
US8058170B2Nov 15, 2011
Method for depositing thin tungsten film with low resistivity and robust micro-adhesion characteristics
CHANDRASHEKAR ANAND83 citations95
US9034768B2May 19, 2015
Depositing tungsten into high aspect ratio features
CHANDRASHEKAR ANAND32 citations94
US8501620B2Aug 6, 2013
Method for depositing tungsten film having low resistivity, low roughness and high reflectivity
CHANDRASHEKAR ANAND16 citations92
US8129270B1Mar 6, 2012
Method for depositing tungsten film having low resistivity, low roughness and high reflectivity
CHANDRASHEKAR ANAND37 citations92
US8409987B2Apr 2, 2013
Method for depositing thin tungsten film with low resistivity and robust micro-adhesion characteristics
CHANDRASHEKAR ANAND34 citations91
CHEN FENG
1 patentJENG ESTHER
1 patentShowing the top 50 of 52 patents by PatentIndex Score.