P

Inventor

CHANDRASHEKAR ANAND

US52 patents
⚠️ This page may combine multiple inventors who share the name “CHANDRASHEKAR ANAND”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LAM RES CORP

26 patents
US10170320B2Jan 1, 2019

Feature fill with multi-stage nucleation inhibition

LAM RES CORP20 citations94
US9997405B2Jun 12, 2018

Feature fill with nucleation inhibition

LAM RES CORP22 citations94
US9972504B2May 15, 2018

Atomic layer etching of tungsten for enhanced tungsten deposition fill

LAM RES CORP21 citations94
US9548228B2Jan 17, 2017

Void free tungsten fill in different sized features

LAM RES CORP23 citations94
US9082826B2Jul 14, 2015

Methods and apparatuses for void-free tungsten fill in three-dimensional semiconductor features

LAM RES CORP37 citations94
US9978610B2May 22, 2018

Pulsing RF power in etch process to enhance tungsten gapfill performance

LAM RES CORP19 citations93
US10760158B2Sep 1, 2020

Ex situ coating of chamber components for semiconductor processing

LAM RES CORP14 citations92
US10211099B2Feb 19, 2019

Chamber conditioning for remote plasma process

LAM RES CORP24 citations92
US10916434B2Feb 9, 2021

Feature fill with multi-stage nucleation inhibition

LAM RES CORP9 citations86
US10580654B2Mar 3, 2020

Feature fill with multi-stage nucleation inhibition

LAM RES CORP12 citations86
US10580695B2Mar 3, 2020

Feature fill with nucleation inhibition

LAM RES CORP13 citations86
US11069535B2Jul 20, 2021

Atomic layer etch of tungsten for enhanced tungsten deposition fill

LAM RES CORP7 citations84
US10566211B2Feb 18, 2020

Continuous and pulsed RF plasma for etching metals

LAM RES CORP15 citations84
US11365479B2Jun 21, 2022

Ex situ coating of chamber components for semiconductor processing

LAM RES CORP8 citations83
US10395944B2Aug 27, 2019

Pulsing RF power in etch process to enhance tungsten gapfill performance

LAM RES CORP9 citations83
US11978666B2May 7, 2024

Void free low stress fill

LAM RES CORP4 citations75
US11901227B2Feb 13, 2024

Feature fill with nucleation inhibition

LAM RES CORP3 citations75
US12261081B2Mar 25, 2025

Tungsten feature fill with inhibition control

LAM RES CORP2 citations73
US12227837B2Feb 18, 2025

Ex situ coating of chamber components for semiconductor processing

LAM RES CORP2 citations72
US10199267B2Feb 5, 2019

Tungsten nitride barrier layer deposition

LAM RES CORP2 citations71
US10977405B2Apr 13, 2021

Fill process optimization using feature scale modeling

LAM RES CORP3 citations70
US12448686B2Oct 21, 2025

Reducing line bending during metal fill process

LAM RES CORP0 citations62
US12173399B2Dec 24, 2024

Reducing line bending during metal fill process

LAM RES CORP1 citations62
US12476143B2Nov 18, 2025

Backside reactive inhibition gas

LAM RES CORP0 citations61
US12002679B2Jun 4, 2024

High step coverage tungsten deposition

LAM RES CORP1 citations61
US12163219B2Dec 10, 2024

Ex situ coating of chamber components for semiconductor processing

LAM RES CORP0 citations60

NOVELLUS SYSTEMS INC

14 patents

CHANDRASHEKAR ANAND

8 patents

CHEN FENG

1 patent

JENG ESTHER

1 patent

Showing the top 50 of 52 patents by PatentIndex Score.