Inventor

IHARA HISANORI

JP40 patents

⚠️ This page may combine multiple inventors who share the name “IHARA HISANORI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

IHARA HISANORI

TOSHIBA KK

Photo-assisted CVD apparatus

Solid-state image pickup apparatus

MOS-type solid state imaging device with high sensitivity

Solid-state image sensor

Solid state image sensor

Solid-state sensor and system

Solid-state image sensor having a substrate with an impurity concentration gradient

Solid-state imaging device and method of manufacturing the same

Solid-state image pickup apparatus

Solid-state image sensor

Amplifier-type solid-state image sensor device

Solid state imaging device

Semiconductor device and manufacturing method thereof

Solid-state image sensor having a substrate with an impurity concentration gradient

Method of manufacturing a photodiode in a solid-state device

Silicon thin film member

Solid-state image pickup apparatus

Solid-state imaging device comprising a signal storage section including a highly doped area

CMOS (complementary metal oxide semiconductor) type solid-state image pickup device using N/P+ substrate in which N-type semiconductor layer is laminated on P+ type substrate main body

Semiconductor device with burried semiconductor regions

Solid-state image pickup device and method of manufacturing the same

Solid state image sensing device and method of manufacturing the same

Silicon thin film member

SAMSUNG ELECTRONICS CO LTD

CMOS image sensors including a vertical source follower gate

Complementary metal-oxide-semiconductor image sensors

Unit pixel of image sensor and pixel array including the unit pixel

Complementary metal-oxide-semiconductor image sensors

Image sensor including first and second overlapping device isolation patterns

Image sensor

CMOS image sensor and method of manufacturing the same

Complementary metal-oxide-semiconductor image sensors

Semiconductor device including via plug

Complementary metal-oxide-semiconductor image sensors

Image sensor devices using offset pixel patterns

Image sensor

IHARA HISANORI

Image sensors having deep trenches including negative charge material

Image sensors including color adjustment path

Methods of fabricating image sensors having deep trenches including negative charge material

Photodiode device based on wide bandgap material layer and back-side illumination (BSI) CMOS image sensor and solar cell including the photodiode device

CMOS pixel including a transfer gate overlapping the photosensitive region